Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Faramehr, Soroush; Kálna, K.; Igić, Petar

doi:10.1109/miel.2014.6842090

Cited by 9 publications

(4 citation statements)

References 14 publications

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“…Figure 1a,b shows the schematic cross-sectional diagram of the designed conventional HEMTs with an Al 0.1 Ga 0.9 N back barrier and a polarization-graded AlGaN back barrier. The epitaxial structure of an Al 0.1 Ga 0.9 N back-barrier HEMT was composed of a 2 µm unintentionally n-type doped GaN buffer layer, with a background carrier concentration of 1 × 10 16 cm −3 [30], a 1 nm AlN space layer, a 10 nm undoped In 0.17 Al 0.83 N barrier layer, a 14-nm-thick GaN channel and a 25 nm undoped Al 0.1 Ga 0.9 N back-barrier layer. Compared with the conventional back-barrier structure, the optimized structure introduced a 25 nm graded AlGaN back barrier with Al content linearly changing from 0% (bottom) to 10% (top) along the epitaxial growth.…”

Section: Device Description and Physical Modelsmentioning

confidence: 99%

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Chang

Sun

et al. 2019

Electronics

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An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

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Section: Device Description and Physical Modelsmentioning

confidence: 99%

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Chang

Sun

et al. 2019

Electronics

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“…As miniaturisation and increased power density are acknowledged evolutionary paths in the world of power electronics, gallium nitride (GaN) transistor technologies emerge as a leading contender [17][18] [19]. However, GaN transistors' functioning is susceptible to various unwanted effects resulted from their intricate structure [20]. Among these effects are signal reflections, which can trigger false ON/OFF regimes and cause the gate to unbalance [21] whereas radiating a large amount of radio frequency (RF) electromagnetic (EM) interferences (EMI) [22][23].…”

Section: Introductionmentioning

confidence: 99%

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

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Wide bandgap Gallium Nitride (GaN) technology promises to deliver the next generation of power transistors capable of high energy density and compact design integration however, without active monitoring high failing rates are recorded due to its instability to design parameter variations. Moreover, the electromagnetic (EM) radiofrequency (RF) emissions due to GaN power switching require extra design resources. Considering the extensive research area dedicated to galvanic isolated magnetic sensors for GaN wafer monolithic integration with usage in power monitoring, this study investigates the conditions that a Hall sensor is required to meet when operating in close proximity of a GaN transistor. Through considerable experimental testing, it was determined that the sensor requires a magnetic field starting from ±1 mT when interfaced with a microcontroller. Additionally, since the GaN transistor's EM RF switching noise was one of the most monitored parameters during the experiments, it was discovered that it is proportional to the transistor's current transfer area whereas its magnitude is due to electrical current required by the load. As a result of these findings, the EM radiated switching noise may apply to all electrical switches and provide a significant advantage when designing for EM compatibility (EMC).

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“…Gallium Nitride (GaN) lateral devices [1][2][3][4][5][6][7][8][9][10] have been proliferating the power electronics industry. For power conversion applications, GaN vertical devices with reduced chip area are preferred over lateral GaN HEMT devices since blocking voltage can be scaled independently of the chip area and high value threshold voltages can be achieved.…”

Section: Introductionmentioning

confidence: 99%