Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime

Abstract

A compact and empirical model of subthreshold swing S and body factor γ is developed in bulk metal oxide semiconductor field effect transistor (MOSFET) in the short-channel regime. Although the relation between S and γ is simply given as S=60(1+γ) in the long-channel regime, this relation no longer holds in the short-channel regime due to the short channel effect (SCE). The model is derived using the capacitance network model and by fitting analytical equations to two-dimensional device simulation results. It is confirmed that the model is valid not only at low drain voltage but also at high drain voltage considering the effect of drain-induced barrier lowering. This model is very effective in the design of variable threshold-voltage complementary metal oxide semiconductor (VTCMOS) circuits.

Systematic Study of Back-Gate Bias Effects in Ultrathin-BOX Tri-gate (UTBT) Transistor with 10nm-Diameter Nanowire Channel

“…Contrary to the L g dependence of γ in bulk planar Tr. [4], γ increases with the decrease of L g . By applying negative V sub , short-channel effect (SCE) can be suppressed leading to small V th roll-off, while positive V sub enlarges V th roll-off ( Fig.5).…”