Random threshold voltage (VTH) fluctuation data obtained

No abstract

A very rapid method of estimating the effect of gate-edge fluctuation on threshold voltage (V th ) variability in metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. An empirical model is developed, in which correlation width (W c ) from gate line-width roughness (LWR) is a key parameter of the model. The validity of the model is confirmed using the measured data and an autoregressive model. W c is extracted from the gate line-edge shape depicted in a scanning electron microscope (SEM) image. This method is very useful for the intuitive understanding of the gate-edge fluctuation effect on V th variability.