Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

Abstract

Random threshold voltage (VTH) fluctuation data obtained

SRAM Cells for Embedded Systems

“…However, aggressive scaling of CMOS technology presents a number of distinct challenges for embedded memory fabrics. For instance, smaller feature sizes imply a greater impact of process and design variability, including random threshold voltage (V TH ) variations, originating from the fluctuation in number of dopants and poly-gate edge roughness [Mahmoodi et al, 2005;Takeuchi et al, 2007]. The process and design variability leads to a greater loss of parametric yield with respect to SRAM bitcell noise margins and bitcell read currents when a large number of devices are integrated into a single die.…”

Transistor Variability Modeling and its Validation With Ring-Oscillation Frequencies for Body-Biased Subthreshold Circuits

“…The impurity concentration is fluctuated by random dopant fluctuations (RDFs), which leads to variation. Reference [21] reports that the fluctuations of are mainly caused by RDFs. Thus the fluctuation of , which is a function of , should be considered for variations.…”

Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

“…On the other hand, as the dimensions of MOSFETs are scaled into the nanometer regime, fluctuations in device characteristics due to variations in gate length, discrete dopant fluctuations, line-edge roughness, and so on have become serious problems [3][4][5]. Moreover, the presence of current noise in MOSFETs has recently become a problem even in digital circuits [6].…”