Modeling of bonding wires array and its application in the design of a 120 W X-band internally matched AlGaN/GaN power amplifier

Gu, Liming; Tang, Shijun; Xu, Yonggang; Yang, Yang; Chen, T.

doi:10.1109/iceaa.2016.7731428

Cited by 6 publications

(5 citation statements)

References 13 publications

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“…By substituting (1) and ( 9) into (10), the S-parameters and their corresponding phases of the parasitic network and the BWs can be determined. A comparison between the packaging parasitic network of CGH40010F and the previously proposed equivalent model network of the BW allows for the determination of phases within the 3-4-GHz range, with setting Z = 50Ω 0 , as shown in Figure 2F.…”

Section: Analysis Of the Phase Advantage Of Bwsmentioning

confidence: 99%

“…BW out (10) On the basis of the inductive characteristics of BWs, they are utilized to mitigate the intrinsic parasitic effects of transistors and achieve the desired target load impedance at the BW plane. To validate the impact of BWs, GaN HEMT bare die CG2H80015D is utilized, where the theoretical optimal load R opt is 32Ω, and the C out at saturation is 1.1 pF.…”

Section: Analysis Of Bws Compensation For Parasitic Effectsmentioning

confidence: 99%

“…However, according to recent studies on BW modeling methods, 4,8,9 a single equivalent inductor cannot fully capture the characteristics of BWs. In other works, [10][11][12] although BWs are discussed using equivalent models, they are not related to their physical parameters and geometric shapes. In these works, the equivalent inductance values in the matching network are often given directly without explicitly explaining the calculation process.…”

mentioning

confidence: 99%

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High‐efficiency Doherty power amplifier based on codesign with bonding wires

Zhong,

He,

Song

et al. 2024

Micro & Optical Tech Letters

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In this letter, a method for designing a Doherty power amplifier (DPA) using bare die and bonding wires (BWs) is proposed. This method adjusts the geometric parameters of BWs to achieve the desired transmission characteristics, allowing BWs to actively participate in the formation of the matching network, thus realizing the codesigning of the DPA and BWs. By designing appropriate BWs compensation to mitigate the intrinsic parasitics of bare die, the inherent obstacles caused by transistor parasitic effects are mitigated. This strategy offers a distinct advantage in terms of concurrently adjusting the target load impedance and phase, leading to a streamlined DPA design process. At the same time, the nonclipping impedance region is expanded, which attenuates the nonlinear effects of parasitic effects. On the basis of the proposed methodology, a DPA operating at 3–4 GHz is designed. Measured results show that the DPA achieves a saturation output power of 42.4–43.6 dBm in the operating band, accompanied by a drain efficiency of 55%–66%, while achieving 42%–54% at 6 dB output back‐off level.

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Section: Analysis Of the Phase Advantage Of Bwsmentioning

confidence: 99%

Section: Analysis Of Bws Compensation For Parasitic Effectsmentioning

confidence: 99%

mentioning

confidence: 99%

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High‐efficiency Doherty power amplifier based on codesign with bonding wires

Zhong,

He,

Song

et al. 2024

Micro & Optical Tech Letters

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“…With the increasing requirements for high power/efficiency in PA designs, GaN technology has been widely adopted due to its excellent characteristics 1 . Many amplifiers with over 100 W output power have been reported for X ‐band 2–6 . To further improve the output power level of a single internally matched device, the increasement of the operation voltage and total gate periphery have been adopted simultaneously.…”

Section: Introductionmentioning

confidence: 99%

“…1 Many amplifiers with over 100 W output power have been reported for X-band. [2][3][4][5][6] To further improve the output power level of a single internally matched device, the increasement of the operation voltage and total gate periphery have been adopted simultaneously. Besides the improvement of GaN transistor die and matching network, heat dissipation of the package and transistor die also needs to be considered, which is very necessary for reliable operation of the devices.…”

Section: Introductionmentioning

confidence: 99%

A high power X‐band internally‐matched power amplifier with 705 W peak power and 51.7% PAE

Feng

Zhou

et al. 2021

Int J RF Mic Comp-Aid Eng

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A high power and high efficiency fully internally-matched GaN power amplifier operating at X-band is proposed. The device is realized by matching four GaN power bars of 18-mm gate periphery. To reduce the size, single layer capacitors with high permittivity are used, and the impedance matching circuits are fabricated on Al 2 O 3 ceramic substrate. The device exhibits saturated output power of more than 660 W with power gain above 9.8 dB within the frequency range of 8.2-8.8 GHz, based on the pulse mode of 100 μs pulse width and 10% duty. In addition, the highest saturated output power and power added efficiency reach 705 W and 51.7% with packaging compact size (26 mm Â 17.4 mm).

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