Modeling of CdZnTe and CIGS and tandem solar cells

Xiao, Yuanzhang; Li, Z. Q.; Lestrade, Michel; Li, Z. M. Simon

doi:10.1109/pvsc.2010.5616486

Cited by 14 publications

(15 citation statements)

References 11 publications

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“…The nanostructure CdZnTe thin film compounds have recently been focused the attention of many research groups due to their desirable optical properties as optical absorption, refractive index and band gap which make it as an important candidate for many scientific and industrial promising applications as solar cell and photovoltaic applications [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Air-stable Cd0.23Zn0.77Te nanostructure thin films

Zawawi

Mahdy

2014

J Mater Sci: Mater Electron

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Air-stable CdZnTe nanostructure thin films were synthesized by inert gas condensation technique under constant preparation conditions of Argon gas flow, deposition rate and substrate temperature 300 K. The CdZnTe nanostructure thin films were deposited on freshly cleaned glass substrates. The film thickness has been raised from 20 to 70 nm. The films exhibited nanocrystalline single phase cubic structure as indicated by grazing incident in-plane X-ray diffraction patterns and ensured by HRTEM diffraction patterns. The average particle size of examined films was increased from 5.6 to 10.6 nm by raising thin film thickness as determined from HRTEM images. The average particle size of examined film was measured by HRTEM after 230 day aging and shows a relative stability in the particle size. The optical transmission, reflection and absorption spectra were influenced by the increasing of the particle size P s . The optical band gap E g decreased from 3.24 to 3.05 eV as average particle size enlarged from 5.6 to 10.6 nm. Higher values of absorption coefficient spectra and refractive indices have been observed for films of higher particle size. Relative stability of optical properties has been detected for aged film. The d.c. electrical conductivity behavior at different temperatures was tuned by changing the particle size of examined nanocrystalline films. The activation energy values are in the range 0.67-0.77 eV regardless the change in particle size.

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Section: Introductionmentioning

confidence: 99%

Air-stable Cd0.23Zn0.77Te nanostructure thin films

Zawawi

Mahdy

2014

J Mater Sci: Mater Electron

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“…The APSYS simulator 8,9,[14][15][16][17] is a general-purpose 2D/3D finite element analysis and modeling software for semiconductor devices. The simulator solves several coupled equations including the basic Poisson equation, and driftdiffusion current equations for electrons and holes.…”

Section: Simulator Apsys and Theoretic Backgroundmentioning

confidence: 99%

“…Whereas one-dimensional (1D) calculation with simplified theoretical model can be a relatively easy work, modeling of MJ including DJ and TJ solar cells has only been done by a few of research groups 13 and commercial software providers 14 . The Crosslight APSYS package 14 has been previously shown to be very effective in modeling TJ solar cells [8][9][10]15,17 with tunnel junction and DJ solar cells 10,16 including DJ cells using Si bottom junction 10 . In this work, based on Crosslight APSYS 14 , CZT/Si DJ and CZT/CT/Si TJ solar cells with tunnel junctions are modeled.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional modeling of CdZnTe/Si based dual and triple junction solar cells

Xiao

Lestrade

et al. 2012

SPIE Proceedings

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Based on Crosslight APSYS, we have made 2D simulation of dual and triple junction solar cells based on CdZnTe and CdTe material system on Si substrate with tunnel junctions. The basic physical quantities like band diagram, optical absorption and generation for these solar cells, and external quantum efficiency for individual subcell junctions are obtained. Current matching analyses and multi-sun concentration simulation are also performed. The modeling shows efficiency 28.85% (one sun AM1.5G) and maximum 32.65% (multi-sun concentration around 400 suns) for CdZnTe/Si dual junction solar cells and efficiency 34.92% (one sun AM1.5G) and maximum 40.10% (multi-sun concentration around 500 suns) for CdZnTe/CdTe/Si triple junction solar cells. The presented results indicate that the dual and triple junction solar cells with II-VI CdZnTe and CdTe on Si can achieve efficiency comparable to those III-V based compound on Ge substrate.

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“…Various tandem solar cells based on CIGS and related materials have been proposed. Modeling that makes realistic assumptions about traps and various parasitic effects indicates that efficiencies as high as $ 30% can be achieved as identified by Song et al and others [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Sputtered metal oxide broken gap junctions for tandem solar cells

Johnson

Song

Abrahamson

et al. 2015

Solar Energy Materials and Solar Cells

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a b s t r a c tBroken gap metal oxide tunnel junctions have been created for the first time by sputtering. Using a ceramic ZnO-SnO 2 target and a reactively sputtered copper target we deposited ZnSnO 3 and Cu 2 O for the n-type and p-type layers, respectively. The band edges and work functions of these materials are suitable for favorable alignment with the bands of copper indium gallium selenide (CIGS) for a tandem CIGS-based solar cell applications. Total junction specific resistivities under 1 Ω-cm 2 have been achieved with Ohmic current-voltage (I-V) characteristics pointing to a broken gap band alignment. Low temperature I-V measurements confirmed the lack of traps at the interface despite other measurements pointing to an interface where bands overlap. Cu 2 O films contained copper inclusions, but they were shown, by conductive atomic force microscopy, not to be the dominant paths for conduction across the junction. Post-deposition annealing of junctions demonstrated thermal stability up to 300 1C, and the ability to improve conduction and influence device material's electron affinity by rapid thermal anneal (RTA). Optical transmission over 78% below a band gap of 2.4 eV was attained for as-deposited films.

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Modeling of CdZnTe and CIGS and tandem solar cells

Cited by 14 publications

References 11 publications

Air-stable Cd0.23Zn0.77Te nanostructure thin films

Air-stable Cd0.23Zn0.77Te nanostructure thin films

Two-dimensional modeling of CdZnTe/Si based dual and triple junction solar cells

Sputtered metal oxide broken gap junctions for tandem solar cells

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