Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs—Part II: Model Derivation and Validity Confirmation

Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs—Part I: Preparation for Modeling Based on Conformal Mapping

“…In Part I, as preparation for model development, the relationships between coordinates in MOSFETs and potential/stream function were derived using conformal mapping, and related validity was verified. In Part II [40], the model's development was considered based on these relationships, and its validity was also verified.…”