“…CMS scheme possesses peculiar properties as high speed [28,30], high bandwidth [28], superior signal integrity [31] and high immune to electrostatic discharge (ESD) induced damage of MOS transistors [29]. The reduced voltage swing in CMS scheme is obtained by using specialized low input impedance current-mode receiver circuits [28,29,31,32]. Until now, nearly all of the researches were focused on voltage mode signaling (VMS) scheme for SWCNT bundle interconnect [10,[18][19][20][21][22][23][24][25][26][27].…”