Modeling of Epitaxial Silicon Growth From the DCS-H<sub>2</sub>-HCl System in a Large Scale CVD Reactor

Ramadan, Zaher; Abdelmotalib, Hamada Mohamed; Im, Ik–Tae

doi:10.1109/tsm.2018.2844849

Cited by 5 publications

(4 citation statements)

References 30 publications

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“…The precursors are injected through the shower heads in the middle of the reactor and are discharged through the outlet at the edge of the susceptor. The detailed reactor structure and modeling of the resulting CVD growth have been provided in previous work [30,31]. Before loading the p-type (100) 300 mm wafers into the epitaxial equipment, the wafers were cleaned with DHF (single wafer spin wet etcher, Apollon, Zeus.…”

Section: Methodsmentioning

confidence: 99%

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

et al. 2021

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The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1:200 dilute hydrofluoric acid (DHF), while wet cleaning in 1:30 DHF is the least effective. However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700 °C to a maximum of 850 °C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700 °C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.

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Section: Methodsmentioning

confidence: 99%

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

et al. 2021

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“…where Ω D is a measure of the interaction between molecules in the system. It is calculated based on the dimensionless temperature,T * D , using Equations ( 9) and (10). k B denotes the Boltzmann constant.…”

Section: Governing Equationsmentioning

confidence: 99%

“…Various types of silicon CVD reactors have been developed to investigate the epitaxial growth process of silicon. These include horizontal single-wafer reactors, [6][7][8] multi-wafer planetary reactors, [9][10][11] vertical rotary reactors, [12][13][14] and bell jar reactors. [15][16][17][18][19] Habuka et al [20][21][22][23][24] conducted numerical simulations and experimental studies to analyze the growth rate of Si epitaxial films in a horizontal singlewafer reactor operated under atmospheric pressure and temperatures ranging from 1073 to 1398 K. They developed the reaction mechanism to explain the component transport and surface chemical reaction simultaneously.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

Li,

Jiang

et al. 2024

Cryst. Res. Technol.

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Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high‐quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non‐uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane‐hydrogen (TCS‐H2) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non‐uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non‐uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non‐uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.

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Optimization of Operating Parameters in a Planetary CVD Reactor Using Response Surface Methodology

Ramadan

2018

Silicon

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Modeling of Epitaxial Silicon Growth From the DCS-H₂-HCl System in a Large Scale CVD Reactor

Cited by 5 publications

References 30 publications

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

Optimization of Operating Parameters in a Planetary CVD Reactor Using Response Surface Methodology

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Modeling of Epitaxial Silicon Growth From the DCS-H2-HCl System in a Large Scale CVD Reactor

Cited by 5 publications

References 30 publications

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

Optimization of Operating Parameters in a Planetary CVD Reactor Using Response Surface Methodology

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Modeling of Epitaxial Silicon Growth From the DCS-H₂-HCl System in a Large Scale CVD Reactor