Modeling of field dependent Maxwell‐Wagner interfacial capacitance for bilayer metal‐insulator‐metal capacitors

Abstract

In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal (MIM) capacitors. The model was verified with measured capacitance-voltage characteristics of fabricated bilayer Al 2 O 3 /TiO 2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10 kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage. K E Y W O R D Sanodization, frequency dependant capacitance, high-k, MIM capacitor, voltage linearity AbstractIn this letter, a compact dual-band bandpass filter (BPF) is designed, analyzed, and fabricated. A loop resonator 2970 | KHANI ET AL.