Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation

Khan, H.; Vasileska, Dragica; Ahmed, Shaikh; Ringhofer, Christian; Heitzinger, Clemens

doi:10.1007/s10825-004-7072-7

Cited by 17 publications

(8 citation statements)

References 7 publications

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“…Ionized dopants in semiconductor channel can strongly effect the transport properties of nanoscale devices [45][46][47][48][49][50]. We have studied an impact of a single attractive ion in undoped Si channel of double-gate (GD) and gate-all-around (GAA) MOSFETs shown in Fig.…”

Section: Ionized Dopant Scattering In Si Nanowirementioning

confidence: 99%

Application of the R-matrix method in quantum transport simulations

2011

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The paper gives an overview of recently developed method for effective quantum transport simulations in nanoscale electronic devices. In the present formulation the device is treated as a set of independent close subsystems with appropriate low-dimensional basis representations. In continuous transport models, the local R-matrix basis makes it possible to avoid discretization of the device area and achieve a much higher numerical accuracy with a lower computational burden compared to common grid schemes. Furthermore, the local basis representation provides a suitable framework for studying ionized impurity scattering by adjusting the shape of the device elements and their internal coordinate representation. Non-equilibrium current carrying electronic states are constructed by a recursive propagation scheme such that the major portion of the computation time scales linearly with the device volume. As an illustration, we apply the method to study ionized impurity scattering in a short Si channel.

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Section: Ionized Dopant Scattering In Si Nanowirementioning

confidence: 99%

Application of the R-matrix method in quantum transport simulations

2011

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“…82 It consists of a thick (100 nm) buried oxide on top of which source/drain regions and a vertical fin are formed. The channel length is 40 nm with a gate length of 20 nm and a fin extension length of 10 nm on each side of the gate.…”

Section: The Role Of Unintentional Doping On Finfet Device Design Parmentioning

confidence: 99%

Modeling Coulomb Effects in Nanoscale Devices

Vasileska¹,

Khan²,

Ahmed³

2008

Jnl of Comp & Theo Nano

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In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. In this review article we demonstrate that: (1) proper treatment of the short-range Coulomb interactions is needed, and (2) there are significant variations in device design parameters for devices fabricated on the same chip due to the presence of discrete dopant atoms at random locations within the channel. The influence of unintentional dopants is also examined in both narrow wire SOI devices and FinFETs with a three-dimensional (3D) in-house Monte CarloMolecular Dynamics Device Simulator.

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“…An unintentional dopant sitting near the source end of the channel degrades the device performance significantly compared to other probable positions [3]. The impact of unintentional dopant heavily depends on its position and applied biases.…”

Section: Effects Of An Unintentional Dopantmentioning

confidence: 99%

Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs

2008

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We utilize a fully self-consistent 3D quantum mechanical simulator based on the Contact Block Reduction (CBR) method to investigate the effects of fin height and unintentional dopant on the device characteristics of a 10-nm FinFET device. The per-fin height off-current is found to be relatively insensitive to fin height while the corresponding per fin height on-current may significantly depend on fin height due to the stronger confinement with decreasing fin height. Also gate leakage is found to show similar behavior as device on-current with decreasing fin height. Trigate (TG) FinFET is found to show better performance compared to Double-gate (DG) FinFET, with the exception of gate leakage current. Simulation results show that an unintentional dopant within the channel can significantly alter device characteristics depending on its position and applied biases. In addition, the effects of unintentional dopant are found to be stronger at high drain bias than at low drain bias.

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Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation

Cited by 17 publications

References 7 publications

Application of the R-matrix method in quantum transport simulations

Application of the R-matrix method in quantum transport simulations

Modeling Coulomb Effects in Nanoscale Devices

Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs

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