Modeling of frequency and temperature effects in GaAs MESFETs

Canfield, P.C.; Lam, Sang; Allstot, D.J.

doi:10.1109/4.50317

Cited by 84 publications

(30 citation statements)

References 13 publications

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“…The effects of self-heating on the drain current are incorporated using a self-consistent electro-thermal model [23]. A straight-forward method of including the thermal effects on the output current is to use a de-rating function on the drain current expression [14], [24], and it can be expressed as:…”

Section: A Transistor Model Developmentmentioning

confidence: 99%

Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen¹,

Wood

Bridges³

et al. 2012

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bondwire arrays connecting the die to the package leads. The effects of three different gate bondpad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behaviour of the large-die LDMOS power field-effect transistor (FET).Index Terms-Global modeling, electrothermal, laterallydiffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET).

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Section: A Transistor Model Developmentmentioning

confidence: 99%

Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen¹,

Wood

Bridges³

et al. 2012

IEEE Trans. Microwave Theory Techn.

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“…Depending on the technology and its effective thermal conduction, static characteristics experience self-heating to a more or less pronounced extend. In the GaAs pHEMT under static and very low frequency conditions, the approach taken in [24] is adopted.…”

Section: Extraction Proceduresmentioning

confidence: 99%

Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

Kallfass

Schumacher

Brazil³

2006

IEEE Trans. Microwave Theory Techn.

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Abstract-A new approach to the modeling of frequency dispersion effects encountered in the drain current characteristics of state-of-the-art hetero field-effect transistors is presented. The empirical, equivalent-circuit based model is dedicated to efficient microwave circuit design and allows for the inclusion of individual dispersion effects, taking into account their respective time constants. The proposed topology allows for small-and large-signal analysis in both the time and frequency domains. Parameter extraction and verification of the model is carried out using pulsed-I-V and dc measurements as well as microwave frequency -parameter characterization of both a GaAs pseudomorphic high electron mobility transistor (pHEMT) and an InP pHEMT technology. Finally, the model is employed in the design and realization of a GaAs pHEMT traveling-wave monolithic microwave integrated circuit. Simulation results are compared to measurements with a focus on figures of merit which are affected by frequency dispersion.Index Terms-Integrated circuit modeling, MODFETs, semiconductor device modeling.

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“…An accurate dynamical electro-thermal model is required. A simple way of including the thermal effects on the output current is to use a de-rating function on the drain current expression [3], [10]. This is effectively a wrapper around the drain current model, and can be expressed in the following way:…”

Section: Electro-thermal Modelmentioning

confidence: 99%

A nonlinear electro-thermal model for high power RF LDMOS transistors

Bridges¹,

Wood²,

Guyonnet³

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

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Abstract-A new nonlinear, charge-conservative, dynamic electro-thermal compact model for LDMOS RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. The intrinsic model current and charge sources are obtained by integration of the real and imaginary components, respectively, of the small-signal Y-parameters: this yields a charge-conservative model by design. A thermal sub-circuit is used to introduce dynamic thermal dependence, and thermal threshold voltage shift is built in. DC and large-signal validation of the model is presented. I. INTRODUCTIONPower amplifiers for wireless communications systems are tightly specified in terms of their linearity performance, bandwidth, etc., while at the same time customers are requiring higher powers, greater efficiencies, as well as easilylinearizable performance. These system specifications and performance compromises, and the increasing adoption of complex signal modulations make it very difficult to design an optimized power amplifier in a timely manner without the use of CAD techniques. This places a premium on the availability of accurate nonlinear transistor models.The combination of high powers and high frequencies in RF and microwave power amplifiers brings together a unique set of challenges for the device modeling engineer. The power transistors themselves are physically large, and may occupy a significant fraction of a wavelength, even at microwave frequencies. The electrical behavior in this distributed environment must be captured in the model. The device will generate a lot of heat, and the thermal effects on the transistor's electrical behavior will also need to be characterized and modeled accurately.Laterally-diffused MOS (LDMOS) FETs are used almost exclusively for high power transistors for wireless infrastructure or base-station applications. They provide an unmatchable combination of performance and cost, and are capable of delivering hundreds of watts of RF power.In this paper we shall outline a new nonlinear intrinsic model for the LDMOS transistor, and its extraction and implementation. The model architecture, shown in Fig. 1, is, by design, technology-independent. The technology-specific components will be defined in the manifolds and extrinsic parts of the model, which capture the electrical behavior of the layout and physical structure of the transistor. The intrinsic part of the model, shown in the center of Fig. 1, describes the nonlinear behavior of the transistor, using voltage-controlled current and charge sources: the model state functions. This

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Modeling of frequency and temperature effects in GaAs MESFETs

Cited by 84 publications

References 13 publications

Multiphysics Modeling of RF and Microwave High-Power Transistors

Multiphysics Modeling of RF and Microwave High-Power Transistors

Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

A nonlinear electro-thermal model for high power RF LDMOS transistors

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