Modeling of ion implantation in single-crystal silicon

Tasch, A.F.; Yang, Shixuan; Morris, Steven

doi:10.1016/0168-583x(95)80137-b

Cited by 13 publications

(5 citation statements)

References 16 publications

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“…The average implantation depth increases in the order of 7 < 0 < 15 < 22:5 < 45 < 30 , when the rotation angle is fixed. This tendency is in good agreement with the experimentally observed phenomena at high-energy boron implantation process of over 1 keV [2][3][4]10,11) and we predicted that the completely same tendency is obtained at low-energy boron implantation of 100 eV.…”

Section: Statistical Analysis Of Average Implantation Depth Transmiss...supporting

confidence: 92%

“…Miyashita and Suzuki 3) also reported obvious depth profile change with tilt angle by SIMS analysis on high-energy implantation of 40 keV. Tasch et al 4) investigated the effects of tilt and rotation angles on boron implantation at 35 keV by Monte Carlo methods, and exhibited good agreement with experimental data. It was shown that tilt angle from 6 to 10 is effective for shallow depth profile.…”

Section: Introductionmentioning

confidence: 78%

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Tight-Binding Quantum Chemical Molecular Dynamics Study on Depth Profile Prediction in Low Energy Boron Implantation Process

Tsuboi

Sagawa

Iga

et al. 2005

Jpn. J. Appl. Phys.

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Recent developments in the study of high Rydberg states require the calculation of radial integrals for dipole transitions between states of large effective principal quantum numbers v, v' and non-zero quantum defect. The method of Bates and Damgaard breaks down in such cases, while that of Edmonds and Kelly makes it possible to reach v = 40, which is often inadequate.We present a technique of extrapolation based on data given by the latter method, which, by judicious choice of the variable of expansion, makes it possible to obtain radial dipole integrals for arbitrarily large v , v' in terms of four functions of the difference vv' with convenient symmetry properties. These functions have been tabulated and representative curves are shown here.

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Section: Statistical Analysis Of Average Implantation Depth Transmiss...supporting

confidence: 92%

Section: Introductionmentioning

confidence: 78%

Tight-Binding Quantum Chemical Molecular Dynamics Study on Depth Profile Prediction in Low Energy Boron Implantation Process

Tsuboi

Sagawa

Iga

et al. 2005

Jpn. J. Appl. Phys.

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“…It is well known that a fraction of implanted ions often reach deeper regions of a substrate due to the channeling phenomenon. 20 In this study, the calculation did not include the effect of channeling; the fairly large difference between the measured and calculated concentrations can be attributed to the effect of such channeling. As a result, implanted Sn and Ge ions with concentrations of more than 10 14 ions/cm 3 are located at depths greater than 200 nm.…”

Section: A Distribution Of Implanted Sn Ions In Ge Substratementioning

confidence: 85%

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

Taoka

Fukudome

Takeuchi

et al. 2014

Journal of Applied Physics

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The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H 2 annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200 C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500 C in an N 2 or H 2 atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33 eV from the conduction band minimum and 0.55 eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500 C was observed. The effect of H 2 annealing at around 200 C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge-and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices. V C 2014 AIP Publishing LLC.

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“…The projected ranges of impurities implanted into silicon could be controlled precisely. Whether the ions are implanted into silicon very shallow or deep, their profiles can be part-precisely depicted by semi-Gauss, Pearson-IV distribution or dual Pearson-IV distribution [1]. It will continue to be the primary means of introducing the impurity atoms into the semiconductor device structures as the semiconductor device decreases in size [2].…”

Section: Introductionmentioning

confidence: 99%