Modeling of linewidth measurement in SEMs using advanced Monte Carlo software

Babin, Sergey; Borisov, S. S.; Ivanchikov, A.; Ruzavin, I.

doi:10.1117/12.673532

Cited by 5 publications

(5 citation statements)

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“…Various softwares and code systems were developed to fill this need of a 3D Monte Carlo software (Yan et al , '98; Ding and Li, 2005; Ritchie, 2005; Babin et al , 2006; Salvat et al , 2006; Villarrubia et al , 2007; Gnieser et al , 2008; Kieft and Bosch, 2008; Gauvin and Michaud, 2009; Villarrubia and Ding, 2009; Johnsen et al , 2010). However, either because of their limited availability to the scientific community or because of their restriction to expert users only, we have extended the software CASINO (Drouin et al , 2007) to 3D Monte Carlo simulation.…”

Section: Introductionmentioning

confidence: 99%

Three‐dimensional electron microscopy simulation with the CASINO Monte Carlo software

Demers¹,

Poirier-Demers²,

Couture³

et al. 2011

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Monte Carlo softwares are widely used to understand the capabilities of electron microscopes. To study more realistic applications with complex samples, 3D Monte Carlo softwares are needed. In this paper, the development of the 3D version of CASINO is presented. The software feature a graphical user interface, an efficient (in relation to simulation time and memory use) 3D simulation model, accurate physic models for electron microscopy applications, and it is available freely to the scientific community at this website: www.gel.usherbrooke.ca/casino/index.html. It can be used to model backscattered, secondary, and transmitted electron signals as well as absorbed energy. The software features like scan points and shot noise allow the simulation and study of realistic experimental conditions. This software has an improved energy range for scanning electron microscopy and scanning transmission electron microscopy applications.

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Section: Introductionmentioning

confidence: 99%

Three‐dimensional electron microscopy simulation with the CASINO Monte Carlo software

Demers¹,

Poirier-Demers²,

Couture³

et al. 2011

Scanning

295

192

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“…In order to improve the accuracy and sensitivity of SEM linewidth measurement many algorithms were proposed. Linewidth measurement researches based on modeling are used widely [9][10]. Resist line edge roughness (LER) is also becoming an issue of increasing concern in the sub-l00 nm fabrication regime due to its critical impact on device performance [11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of nano-scale lines through anodic porous alumina membrane

Han¹,

Jiang²,

Wei³

et al. 2009

2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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Anodic Porous alumina membranes are fabricated with different pore sizes through second oxide technique by changing the acid electrolyte and the anodization voltage. The pore diameter value and interpore distance are evaluated through SEM images. Nanostructure patterns with nanometer scale lines can be obtained on the cleaved cross-section of porous alumina membrane. Nano CD (NCD) Iinewidth standard product lines are prepared in this way. The Iinewidth roughness (LWR) and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing and analysis technology. The average Iinewidth is less than 40 nm and the LWR and LER are estimated.

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“…In order to improve the accuracy and sensitivity of SEM linewidth measurement many algorithms were proposed. Linewidth measurement researches based on modeling are used widely [4][5]. Resist line edge roughness (LER) is also becoming an issue of increasing concern in the sub-100 nm fabrication regime due to its critical impact on device performance [6].…”

Section: Introductionmentioning

confidence: 99%

Measurement of linewidth and line edge roughness for 1D nano CD linewidth standard product lines

Han¹,

Jiang²,

Wei³

et al. 2007

2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.

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Modeling of linewidth measurement in SEMs using advanced Monte Carlo software

Cited by 5 publications

References 0 publications

Three‐dimensional electron microscopy simulation with the CASINO Monte Carlo software

Three‐dimensional electron microscopy simulation with the CASINO Monte Carlo software

Fabrication and characterization of nano-scale lines through anodic porous alumina membrane

Measurement of linewidth and line edge roughness for 1D nano CD linewidth standard product lines

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