Modeling of local reduction in TiSi/sub 2/ and CoSi/sub 2/ growth near spacers in MOS technologies: influence of mechanical stress and main diffusing species

Fornara, P.; Poncet, A.

doi:10.1109/iedm.1996.553125

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…The effects of these stresses can be harmful in certain applications (breakdown phenomenon) and sometimes beneficial like for example to improve the transport properties in silicon or to mechanically reinforce glass [1][2]. In this study, the influence of the localised field of stress, of which the depth is in the order of tens of micrometres, on the propagation of surface waves were studied theoretically and experimentally on chemically tempered amorphous solids.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Micrometric and Localised Residual Stresses on Amorphous Materials Using Dispersion of Surface Acoustic Waves

Duquennoy

Ouaftouh

Deboucq

et al. 2014

AMR

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Abstract.For amorphous materials such as glass, the fragility of the material can be limited using surface reinforcement by chemical tempering. The principle of chemical tempering consists in forming a localised compression layer on the surface by immersing the glass in a solution of molten potassium nitrate. In this study, dispersion of surface ultrasonic waves caused by the presence of residual surface stresses was studied. The thickness and the level of the stressed surface zones were estimated using an inverse method.

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Section: Introductionmentioning

confidence: 99%

Characterization of Micrometric and Localised Residual Stresses on Amorphous Materials Using Dispersion of Surface Acoustic Waves

Duquennoy

Ouaftouh

Deboucq

et al. 2014

AMR

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“…The stress is defined as compressive or tensile stress for downward or upward directions as presented by arrows in Figs. 2-5. During the annealing and under compressive stress, the diffusion of Co atoms is enhanced [5], thus increasing the thickness of Co salicide. On the contrary, the tensile stress retards the formation of Co salicide.…”

Section: Device Fabricationmentioning

confidence: 99%

“…Therefore, among these TEM micrographs (Figs. [2][3][4][5], the effective area of Co salicide layer is largest in Fig. 2's structure (a), but smallest Fig.…”

Section: Device Fabricationmentioning

confidence: 99%

Investigation and modeling of stress effects on the formation of cobalt salicide

Hsu

Fang

et al. 2005

IEEE Electron Device Lett.

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This letter studies resistance variations of the Co salicide interconnect accompanied by various surrounding in a sub-0.13-m CMOS technology. Our analysis shows that, during the salicidation processes, the diffusion of Co atoms and thus salicide thickness and forms of Co salicide layer are greatly affected by the stresses from surrounding structures. Moreover, variations in resistance among the various structures could exceed 100%. Thus, these stress effects were analyzed in detail based on transmission electron microscopy micrographs of Co salicide layers accompanied by four different surrounding structures.

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Formation of voids in Ti-salicided BF2+-doped submicron polysilicon lines

Chua

Pey

Wei

et al. 2000

Journal of Applied Physics

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The physical characteristics and distribution of voids in TiSi2/p+-Si system as a function of polycrystalline silicon (polySi) linewidths were investigated in detail using scanning electron microscopy, cross-sectional transmission electron microscopy, and the focused ion beam technique. Surface and subsurface voids were found in Ti-salicided BF2+-implanted polycrystalline silicon (polySi) lines that were annealed at temperatures ranging from 650 to 850 °C. Most of the subsurface voids were found in the TiSi2 film as well as at the TiSi2/polySi interface. The void density, shape irregularity, and void size increase with decreasing polySi linewidth, especially when it is smaller than 0.24 μm, indicating that stress associated with narrow polySi lines may play an important role in the voiding phenomenon. It was also shown that the TiN film overlying the TiSi2 film and the etch-back process could not be responsible for the void formation process. Instead the absence of voids in B+-implanted polySi and the segregation of fluorine into the TiSi2/polySi and TiN/TiSi2 interfaces from BF2+-implanted polySi after the first salicidation rapid thermal annealing suggest a fluorine-assisted voiding mechanism.

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Modeling of local reduction in TiSi/sub 2/ and CoSi/sub 2/ growth near spacers in MOS technologies: influence of mechanical stress and main diffusing species

Cited by 5 publications

References 6 publications

Characterization of Micrometric and Localised Residual Stresses on Amorphous Materials Using Dispersion of Surface Acoustic Waves

Characterization of Micrometric and Localised Residual Stresses on Amorphous Materials Using Dispersion of Surface Acoustic Waves

Investigation and modeling of stress effects on the formation of cobalt salicide

Formation of voids in Ti-salicided BF2+-doped submicron polysilicon lines

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