2021 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE) 2021
DOI: 10.1109/ccece53047.2021.9569051
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Modeling of MoS2 Tunnel Field Effect Transistor in Verilog-A for VLSI Circuit Design

Abstract: This paper presents the design of an inverter, half adder, and ring oscillator using compact models of MoS2 channelbased tunnel field effect transistor (TFET). The TFET models (both n and p-type) are written in high-level hardware language Verilog-Analog (Verilog-A) following the analytical model of [1] and the output characteristics of the components are simulated in Cadence/Spectre software. The performance of the designed inverter (a basic building block of VLSI circuit) is analyzed by extracting its differ… Show more

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