Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

Abstract

Multiple cations intermixing in an In 0:53 Ga 0:47 As-In0:52Al0:48As quantum-well (QW) structure with 60-Å well width is being studied based on the expanded form of Fick's second law. Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812 C. For a small interdiffuison, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance. For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV ( = 1.47 m) to 1.016 eV ( = 1.22 m) is obtained, thus giving a high tunability of the lasing wavelength.

The effects of interdiffusion on the subbands in GaxIn1−xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths

“…[13][14][15][16] For QW devices, both the quantum size effect and the strain induced in the layered structure can be utilized to custom design the band structure such that laser diodes with high differential gain, low threshold current, high output power, and enhanced linewidth and modulation bandwidth are possible. [17][18][19] Interdiffusion is a thermal process that facilitates the movement of constituent atoms across the heterointerface.…”

Quantum well intermixing for photonic IC applications

“…For large interdiffusion (i.e. 6hrs), a large blue-shifted of peak gain from 0.842 to 1.016eV (1.47 to 1 .22.tm) was reported [15], thus providing a high tunability of lasing wavelength. calculation is 5x10'cm.…”