Modeling of reactive sputtering of compound materials

Abstract

An experimentally verified useful new model for reactive sputtering is presented. By considering the total system (target erosion, gas injection, chamber wall deposition, reactive gas gettering at all surfaces, etc.) during deposition it is possible to evaluate quite simple relationships between processing parameters. We have expanded earlier treatments to include these phenomena. The model involves that gettering of the reactive gas takes place at the target and at the walls opposite to the target. Arguments are also presented for how the sputtered materials (elemental target atoms and the formed compound) contribute to the formation of the surface composition of the walls opposite to the sputtering electrode. The mass flow of the reactive gas has been chosen as the independent parameter in this presentation. Results for partial pressure and sputter rate are presented. The theoretical values are compared with experimental results from reactive sputtering of TiN. It is also pointed out that the calculated values agree extremely well with results presented in the literature by several other authors.

Modelling of Magnetron Sputtering of Tungsten Oxide with Reactive Gas Pulsing

“…The dynamic model used in this report is an extension of our previous work, which is based on the concept introduced by Berg et al [12,13] In the basic model, the formation of compound was attributed to chemisorption only, while recent research shows the importance of ion implantation. [9,10] To account for this, two different implantation mechanisms are included.…”

Oxygen Incorporation in Reactive-Sputter-Deposited TiN Films: Influence of the Metal to O2 Gas Flux Ratio

“…In the vacuum evaporation case, a reduction in the impurity gas pressure was observed and was attributed to the similar gettering eŠect 44) . The eŠect of gas gettering is included in the wellknown reactive sputtering model proposed by Berg et al 15,16) In that model, the incident reactive gas ‰ux is split into three parts: (1) that pumped out by the evacuation port of the system, (2) that gettered onto the active area of the target surface, and (3) that gettered onto the active area of the chamber wall. In a steady state, the incident reactive gas ‰ux onto the target should balance the emission ‰ux by sputtering.…”

“…TiN has also been used to model reactive sputtering 15,16) and the atomistic processes of metal nitrideˆlm growth 17) . Intensive studies have also been undertaken to understand the eŠects of the preparation conditions on the microstructure and preferred orientation of the depositedˆlms (see, for example, reviews by Kajikawa et al 18) and by Mahieu et al 19) ).…”

Structure evolution and properties of TiAlCN/VCN coatings deposited by reactive HIPIMS

“…The introduction of HIPIMS in the coating deposition stage in reactive mode however requires careful consideration of the target poisoning effect. Target poisoning is an old problem in PVD technology and extensive research as well as progress has been achieved over the years in understanding, modelling and controlling the process [18,19,20]. However it is fair to say that the effects related to target poisoning in HIPIMS are still not very well studied and understood [21,22].…”