Modeling of stress effects in silicon oxidation

Sutardja, P.; Oldham, W.G.

doi:10.1109/16.43661

Cited by 112 publications

(95 citation statements)

References 13 publications

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“…24 A further improvement of the modeling of stress effects in silicon oxidation led to the introduction of shear-stressdependent viscosity. [24][25][26] This stress effect is, in fact, similar to a plastic phenomenon and gives a nonlinear behavior to the material. Indeed, it is known from the experiment that SiO 2 becomes more fluidic under a high stress state, 27 leading to a strong modification of its viscosity.…”

Section: Modeling Of the Si Nanocrystal Oxidationmentioning

confidence: 99%

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Coffin

Bonafos

Schamm

et al. 2006

Journal of Applied Physics

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Articles you may be interested inModeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices Journal of Applied Physics 110, 033524 (2011) The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of two-dimensional arrays of Si nanocrystals ͑NCs͒ fabricated by ultralow-energy ion implantation ͑1 keV͒ in thin silicon dioxide layers is reported. The NC characteristics ͑size, density, and coverage͒ have been measured by spatially resolved electron-energy-loss spectroscopy by using the spectrum-imaging mode of a scanning transmission electron microscope. Their evolution has been studied as a function of thermal treatment duration at a temperature ͑900°C͒ below the SiO 2 viscoelastic point. An extended spherical Deal-Grove ͓J. Appl. Phys. 36, 3770 ͑1965͔͒ model for self-limiting oxidation of embedded silicon NCs has been carried out. It proposes that the stress effects, due to oxide deformation, slow down the NC oxidation rate and lead to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results. Soft oxidation appears to be a powerful way for manipulating the NC size distribution and surface density.

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Section: Modeling Of the Si Nanocrystal Oxidationmentioning

confidence: 99%

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Coffin

Bonafos

Schamm

et al. 2006

Journal of Applied Physics

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“…9,10 Our approach to simulate plasticity is based on models of the thermal oxidation of silicon, in which the viscosity of SiO 2 is dramatically decreased above a threshold stress. 31,32,34 Because the enhanced fluidity of the oxide would facilitate creep at the interface, we simply imposed a limiting critical stress at the metal-oxide interface, at which further increases in the creep rate would require negligible additional stress. 35 The zero-velocity boundary condition is used only when the calculated interfacial stress is between the compressive and tensile limits, xx min and xx max .…”

Section: ͓9͔mentioning

confidence: 99%

“…Amorphous SiO 2 films formed by thermal oxidation exhibit plasticity; i.e., their viscosity decreases dramatically above a critical stress. 31,32 We take the viscosity of anodic alumina to be constant but incorporate plasticity through the boundary condition at the metal-film interface, as described below.…”

mentioning

confidence: 99%

A Model for Coupled Electrical Migration and Stress-Driven Transport in Anodic Oxide Films

Hebert

Houser

2009

J. Electrochem. Soc.

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A model for transport in amorphous anodic oxide films was developed in which ion migration was driven by gradients of mechanical stress as well as electric potential and which included viscoelastic creep of the oxide. Simulations were presented for the galvanostatic growth of planar barrier-type anodic aluminum oxide films. It is assumed that stress originates at the metal-film interface due to the volume change upon oxidation. The average stress in the film decayed during growth and evolved from compressive to tensile with increasing applied current density. The model was fit to stress-thickness measurements using a viscosity of 1×1012Pas on the same order of magnitude as that of many other amorphous materials displaying viscous creep. The current density increased exponentially with electric field, in agreement with an empirical high field conduction behavior. The metal ion transport number was predicted based on the motion of markers in the film and increased with current density in quantitative agreement with experimental measurements. The model represents a unified quantitative interpretation of ionic conduction, transport numbers, and mechanical stress measurements in anodic films.

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“…In the models of Kao et al 29 and Sutardja et al, 30 the effect of stress normal to Si/SiO 2 interface, σ nn , is considered to evaluate the reaction rate constant, i.e.,…”

Section: A Growth Rate Of Silica Layermentioning

confidence: 99%

“…This theory was also followed by Navi et al, 23 Noma et al 24 and Delph et al 25 Meanwhile, Irene et al 8,[26][27][28] investigated the effect of stress on reaction rate constant and suggested that the reaction rate at the scale/substrate interface was proportional to the magnitude of compressive stress in the scale. Kao et al 5,29 and Sutardja et al 30 investigated the two-dimensional thermal oxidation of silicon. Due to the stress effect, the oxide grown on a concave surface was much thinner than that grown on a convex surface.…”

Section: Introductionmentioning

confidence: 99%

Coupled mechanical-oxidation modeling during silicon thermal oxidation process

Zhang

2015

AIP Advances

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This work provided an analytical model to solve the coupled mechanical-oxidation problem during the silicon thermal oxidation process. The silicon thermal oxidation behavior under two different mechanical load conditions, i.e., constant strain and uniaxial stress, were considered. The variations of oxide stress and scale thickness along with oxidation time were predicted. During modeling, all the effects of stress accumulation due to growth strain, stress relaxation due to viscous flow and the external load on the scale growth rate were taken into consideration. Results showed that the existence of external loads had an obvious influence on the oxide stress and scale thickness. Generally, tensile stress or strain accelerated the oxidant diffusion process. However, the reaction rate at the Si/SiO2 interface was retarded under uniaxial stress, which was not found in the case of constant strain load.

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Modeling of stress effects in silicon oxidation

Cited by 112 publications

References 13 publications

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

A Model for Coupled Electrical Migration and Stress-Driven Transport in Anodic Oxide Films

Coupled mechanical-oxidation modeling during silicon thermal oxidation process

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