The transport of copper in silicon dioxide thermally grown on single crystalline silicon was studied by capacitance techniques, secondary ion mass spectroscopy (SIMS) analysis, and Rutherford backscattering spectrometry (RBS). Metal/ oxide/silicon (MOS) capacitors were used to study the penetration of copper into the oxide as a function of temperature and applied electric field. The role of a titanium layer between the copper and the oxide was also studied. Bias-thermal stress (BTS) studies of MOS structures were conducted at 150~ to 300~ with an electric field of 1 MV/cm for times ranging between 10 rain and 168 h. It is shown that without bias a relatively small amount of copper reaches the silicon/silicon 17 3

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