A general simulator for VLSI lithography and etching processes: Part I—Application to projection lithography

Oldham, W.G.; Nandgaonkar, S.N.; Neureuther, Andrew R.; O'Toole, Michael M.

doi:10.1109/t-ed.1979.19482

Cited by 215 publications

(51 citation statements)

References 10 publications

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“…(4). Although the number of mirrors in EUV lenses is smaller than the number of lenses in a 193-nm immersion system, the flare level as a whole is much higher.…”

Section: Figurementioning

confidence: 97%

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Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Lai

2012

Advanced Optical Technologies

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Advances in computational lithography over the last 10 years have been instrumental to the continued scaling of semiconductor devices. Competitive scaling requires two types of complementary models: fast predictive empirical models that can be used for pattern correction and verification; rigorous physical models that can be used to identify key physical effects that must be considered to ensure pattern fidelity, but are too resource intensive to use for full chip applications. Today, all computational lithography efforts such as the optical proximity correction (OPC) and the optical rules check (ORC) depend on the ability to predictively model the lithography and metrology processes. We discuss some of the current modeling practices in optics, mask, resist and etching, leading to the " Holy Grail " of predictively modeling entire patterning process which we call " virtual fab " . Extreme ultraviolet (EUV) modeling is discussed due to its potential to extend optical lithography scaling for future nodes. Modeling of novel technologies such as Diblock Copolymer patterning is also discussed to demonstrate new opportunities for continued scaling. Complexity of the " virtual fab " approach is extremely high as there are multiple dimensions in this approach. The need to overcome this complexity, by reducing the number of dimensions of the problem, is evident. Lastly, the ability to leverage lithography modeling in design co-optimization is an important element of semiconductor device scaling.

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“…(4). Although the number of mirrors in EUV lenses is smaller than the number of lenses in a 193-nm immersion system, the flare level as a whole is much higher.…”

Section: Figurementioning

confidence: 97%

“…Later, the Neureuther Group at U.C. Berkeley developed a full simulation package that included image formation simulation and is termed SAMPLE [4] . The first commercial simulation software called PROLITH [5] was offered by Mack (now marked by KLA-Tencor Inc.) and followed shortly by SPLAT [6] from the Berkeley ' s group.…”

Section: History Of Simulation Softwarementioning

confidence: 99%

Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Lai

2012

Advanced Optical Technologies

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“…These papers covered much of the basic physics and chemistry issues that enable a reasonable description of the key microlithographic processes, both from the standpoint of modeling and simulating the key phenomena, as well as measuring and characterizing the more critical physical parameters. Indeed, much of this work led to the development of the first major microlithography simulation program called SAMPLE, developed by A. Neureuther's research group at Berkeley [14], [15]. These developments in understanding of the interplay between imaging, exposing, baking, and dissolving, helped to take the "art" out of lithographic processes, and place the field in a much better technological and scientific position.…”

Section: Brief Historical Reviewmentioning

confidence: 99%

“…The early simulation programs, as best illustrated by the early academic program SAMPLE [14], [15] and later by some internal industrial programs and the commercial program PROLITH [16], [17], were all oriented toward understanding the formation of long lines and spaces in photoresist. More specifically, these programs calculated the two-dimensional (2-D) cross sections of infinitely long photoresist lines and spaces, as illustrated in Fig.…”

Section: Brief Historical Reviewmentioning

confidence: 99%

Using advanced simulation to aid microlithography development

Cole

Barouch²,

Conrad³

et al. 2001

Proc. IEEE

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“…Numerical simulations have become a powerful approach to evaluate and predict the pattern profiles in lithography techniques [1][2][3][4][5][6][7][8][9]. With the progress of pattern formation techniques, the feature size of the resist pattern has decreased.…”

Section: Introductionmentioning

confidence: 99%

Multiphysics Simulation of Nanopatterning in Electron Beam Lithography

Yasuda

Tada

Kotera

2016

J. Photopol. Sci. Technol.

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Multiphysics simulations are performed to analyze the pattern formation process in electron beam lithography (EBL). The simulations consist of a Monte Carlo simulation of electron scattering and molecular dynamics simulation. Some issues encountered in EBL such as electron irradiation defects, resist heating effects and charging effects on pattern formation are studied using the simulations. The simulations revealed shrinkage of the electron-exposed resist surface, the change of pattern edge caused by rising temperature and the shift of electron beam landing position induced by a charging effect. Atomic-scale information on pattern structure and stress distribution in EBL are also discussed.

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A general simulator for VLSI lithography and etching processes: Part I—Application to projection lithography

Cited by 215 publications

References 10 publications

Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Using advanced simulation to aid microlithography development

Multiphysics Simulation of Nanopatterning in Electron Beam Lithography

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