Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection

Boukriss, B.; Haddara, H.; Cristoloveanu, S.; Chovet, A.

doi:10.1109/55.43091

Cited by 13 publications

(4 citation statements)

References 8 publications

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“…A detailed study of the charge pumping current as a function of the base applied voltage allows us, for example, to separate the contribution of the trapped charges within the oxide and of the interfacial states from the threshold voltage shift observed in an MOS transistor following hot carrier stress [46]. As with hot carrier degradation, an increase in interfacial states causes a significant increase in the lowfrequency noise spectrum S V D (equation 3), which can be used as a quite sensitive indicator of the degradation of the device [47][48][49][50]. Although it is not yet clear how the result of noise measurements can be used either for the estimation of the reliability of the MOS or for a deeper understanding of the damage mechanism, it must be noted that there are at last two reasons why this characterization technique is expected to become more and more useful in the future.…”

Section: Hot Electronsmentioning

confidence: 99%

“…However active interface states may be found within the oxide layer up to 2 nm away from the interface with time constants as long as 10 9 s! Since the noise power S V D is proportional to the inverse of the frequency, the longer the time constant of the interfacial states data, the higher their contribution to the detected spectra [50,52]. Therefore noise measurements are particularly suited for the investigation of the slow interfacial states and may provide additional information to the data obtained using the charge pumping technique.…”

Section: Hot Electronsmentioning

confidence: 99%

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Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Ciofi

Neri

2000

J. Phys. D: Appl. Phys.

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The analysis of the degradation mechanisms that affect solid-state devices represents a key factor in the era of VLSI technology. This paper presents an overview of how the low-frequency noise measurement (LFNM) technique has been applied to the study of the most frequent causes of failure in integrated circuits and discrete components. After discussing noise and fluctuations in electron devices, we present some results obtained by applying LFNM to the analysis of some degradation mechanisms. Although several other causes of degradation are taken into consideration (ageing, radiation, hot electrons), the focus is on two specific failure mechanisms: electromigration in interconnect lines and ultra-thin oxide breakdown in MOS capacitors. Experience has highlighted the need for dedicated measurement systems, thus an entire section of the paper outlines both the instrumentation required and the reduction of the effects of spurious noise sources and external disturbances.

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Section: Hot Electronsmentioning

confidence: 99%

Section: Hot Electronsmentioning

confidence: 99%

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Ciofi

Neri

2000

J. Phys. D: Appl. Phys.

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“…The cut-off frequency (f T ) and maximum oscillation frequency (f max ) will also be affected, which induce the degradation of RF power performance at high frequency 2 . The increased random thermal motion of carriers in the channel after hot-carrier stress also increases the channel thermal noise and flicker (1/f) noise 3, 4 . By considering the degradation in DC and RF performance of active devices, the reliability of circuits in RF communication system can be predicted.…”

Section: Introductionmentioning

confidence: 99%

Degeneration of CMOS Power Cells After Hot-Carrier and Load Mismatch Stresses

Liu

Wang

et al. 2008

IEEE Electron Device Lett.

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In this letter, we investigate the performance degradation of nMOS transistors due to hot-carrier effect and load impedance mismatch. The DC and RF characteristics, such as drain current, threshold voltage, transconductance, output power, and power-added efficiency etc., are affected under hot-carrier effect. With load impedance mismatch, the transistors experience the reflected power from load and increase the energy of hot carriers. This effect will make DC and power performances degenerate heavily. In this paper, device characteristics were measured at 5.2 GHz.

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“…The cut-off frequency (f T ) and maximum oscillation frequency (f max ) will also be affected, which induce the degradation of RF power performance at high frequency [2]. The increased random thermal motion of carriers in the channel after hot carrier stress increases the channel thermal noise and flicker (1/f) noise [3,4]. According to the relationship between DC and RF performance degradation of active devices, the reliability of circuits in RF communication system can be predicted.…”

Section: Introductionmentioning

confidence: 99%

Performance degeneration of CMOS RF power cells after hot-carrier and load mismatch stresses

Liu

Wang

et al. 2007

2007 50th Midwest Symposium on Circuits and Systems

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In this paper, we investigate the performance degradation of nMOS transistors due to hot-carrier effect and drain power mismatch. The DC and RF characteristics, such as drain current, threshold voltage, transconductance, power gain, etc., are affected under some kinds of stresses. During the power contour measurement by a load-pull system, the transistors experience the reflection power from load for the most part of measurement time. This mainly results from mismatching impedance and will make drain current degenerated. The degree of the degeneration depends on the quantity of load mismatch and device layout pattern of power cells. From the measurement results, it is found that the degradation can be mitigated by a dispersive layout structure. From the experimental results, the layout of power cells can be designed properly to mitigate the degeneration of power performances and improve the reliability of circuits when designing CMOS RF power amplifiers. The power performances of this paper were measured at 5.2 GHz.

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Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection

Cited by 13 publications

References 8 publications

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Degeneration of CMOS Power Cells After Hot-Carrier and Load Mismatch Stresses

Performance degeneration of CMOS RF power cells after hot-carrier and load mismatch stresses

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