Modeling of the absorption properties of Ga1−xInxAs1−yNy/GaAs quantum well structures for photodetection applications

Aissat, A.; Bestam, Rachid; Alshehri, Bandar; Vilcot, Jean-Pierre

doi:10.1016/j.spmi.2015.01.019

Cited by 14 publications

(1 citation statement)

References 19 publications

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“…The E + transition is blue-shifted and the E − transition is red-shifted from the resonant N level with increasing N concentration. When the extended state in the conduction band and the N localised state are empowered with the energies of E M [33,34] and E N [35,36], respectively, splitting of the conduction band occurs into two sub-bands, where the formula for the lower E + and upper E − sub-band for our samples is given by:…”

Section: Resultsmentioning

confidence: 99%

Nitrogen induced localised-state ensemble effect on multi quantum well GaInNAs with low indium concentration

Nordin¹,

Samad²,

Sarcan³

et al. 2021

J. Phys. D: Appl. Phys.

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In this paper, temperature dependence photoluminescence has been taken on two multi-quantum well GaInNAs, with low indium composition and the impact of percentage nitrogen incorporation ⩽1%. The variation of peak energy position, linewidth, and integrated intensity emission have been investigated by adopting a localised state ensemble model to anticipate the dissimilar spontaneous emission mechanisms of the two samples. A good agreement has been observed between theoretical analysis and experimental data and enriches the understanding of the design and provides improvement opportunities for future GaInNAs based optoelectronic devices for biomedical applications.

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