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This work is based on modeling and simulation GaAsNBi/GaAs structure. The structure was optimized to improve the efficiency of conversion. The effect of concentrations of N and Bi on the strained, energy bandgap, and the characteristic J (V) is taken into consideration. For concentrations (N = 2%, Bi = 8%) energy bandgap is O.90eV. If we increase the two concentrations (N = 3%, Bi = 12%) the gap equal to O.62eV. This allows us to grow the absorption and performance. For (N = 2%, Bi = to) was obtained in an acquiesce of approximately 24.5%. This study allows us to improve the efficiency of solar cells and multi-quantum wells.

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