Modeling of the Lateral Emitter-Current Crowding Effect in SiGe HBTs

Yadav, Shon; Chakravorty, Anjan; Schröter, M.

doi:10.1109/ted.2016.2606652

Cited by 7 publications

(3 citation statements)

References 14 publications

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“…However, most of the reported topologies ignore the AC current crowding effect [5] , which is a critical factor for predicting the AC performance of HBT devices, especially in high frequency range. AC current crowding occurs in the high frequency range related to the bypassing effects of base-emitter capacitance.…”

Section: Introductionmentioning

confidence: 99%

A complete small-signal HBT model including AC current crowding effect

Huang¹,

Liu²

2021

J. Semicond.

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An improved small-signal equivalent circuit of HBT concerning the AC current crowding effect is proposed in this paper. AC current crowding effect is modeled as a parallel RC circuit composed of C bi and R bi, with distributed base-collector junction capacitance also taken into account. The intrinsic portion is taken as a whole and extracted directly from the measured S-parameters in the whole frequency range of operation without any special test structures. An HBT device with a 2 × 20 μm2 emitter-area under three different biases were used to demonstrate the extraction and verify the accuracy of the equivalent circuit.

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Section: Introductionmentioning

confidence: 99%

A complete small-signal HBT model including AC current crowding effect

Huang¹,

Liu²

2021

J. Semicond.

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“…It was also found out that a multi-transistor network can accurately model the LNQS effect [12] although it is not preferred in compact model implementation. Instead, a two-section model [13] employing charge partitioning across the internal base resistance (R Bi ) shows results with comparable accuracy in the small-as well as large-signal domain. However, in most of the reported results, the model comparison is done either with only TCAD simulation or with actual data measured at not so high frequency.…”

Section: Introductionmentioning

confidence: 99%

“…Figure13. Sensitivity of f bepar on frequency dependent y 11 for the 0.09 µm × 4.8 µm SiGe HBT biased at V BC = 0 V with V BE = 0.85 V: comparison between TCAD (circles) and Hicum L2v2.4 (solid line).…”

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confidence: 99%

Sub-THz and THz SiGe HBT Electrical Compact Modeling

et al. 2021

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From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.

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