Modeling of the Reaction for Low Pressure Chemical Vapor Deposition of Silicon Dioxide

Learn, Arthur J.

doi:10.1149/1.2113848

Cited by 27 publications

(23 citation statements)

References 2 publications

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“…The inter-wafer spacing has a large effect on the deposition rate and the thickness uniformity, in agreement with earlier reports [5,6]. In our case, when the wafer spacing is reduced from 13 mm to 3 mrn, the deposition rate decreases by about 5 times.…”

Section: Resultssupporting

confidence: 93%

“…The deposition mechanism is still under consideration in the literature [3,6]. The dependence of the deposition rate on the wafer to wafer distance in an LPCVD reactor is explained based on the surface reaction mechanism [5]. Later, for LPCVD conditions, a mechanism based on gas phase reactions which provided one [6] or two [I] precursors was suggested.…”

Section: Discussionmentioning

confidence: 99%

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On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂

et al. 1995

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An experimental study on the deposition kinetics of LPCVD SiOz films at 450°C in a hot wall system from Si& and O2 in the range of very high O2 1 SiH4 ratios (100-284) and very low Si& partial pressures (3.5-5.2 pbar) is presented. Unexpectedly, a low deposition rate of 1.8 nmlmin with a thickness uniformity of less than 6 MAXMIN% on five simultaneously processed wafers is obtained. The results can be explained by a gas phase formation of precursors which dominate the deposition process. This process can be used for different device applications where thin S i 0 2 films are required, such as Thin Film Transistors and EEPROMs.

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Section: Resultssupporting

confidence: 93%

Section: Discussionmentioning

confidence: 99%

On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂

et al. 1995

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“…The growth rate has a sublinear dependency on wafer spacing. A similar dependency is noted for low temperature LPCVD oxide (9). In that case, a proportionality for growth rate, GR, is derived as follows…”

Section: Resultsmentioning

confidence: 62%

Characterization of Oxide Growth at High Temperatures and Low Pressures from Silane/Nitrous Oxide Reaction

Learn¹,

Jackson²

1985

J. Electrochem. Soc.

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Fig. 5. Model of anisotropic etching in evacuated wet system. Effective diffusion barrier was formed by small hydrogen bubbles on aluminum side wall surface. Here, open and filled circles indicated hydrogen and phosphoric acid, respectively, and arrows show the flux of each molecule.shown in Fig. 4 as a function of pressure. This shows that lateral etching uniformity was improved remarkedly with decreasing pressure. That is, the deviation of 0.2 ~m at atmospheric pressure decreased to 0.03 ~m (5%) at 30-100 torr and increased again at still lower pressures. This indicates clearly that evacuated wet etching system offers excellent lateral etching uniformity. Thus, one is able to achieve fine pattern electrode etching with 1.0-1.2 ~m linewidth, by the evacuated etching, if the end point detection technique employing electrochemical potential is used.In wet aluminum etching, hydrogen bubbles are generated on the aluminum film by the chemical reaction with phosphoric acid. Therefore, control of hydrogen bubble removal is important to the improvement of etching uniformity and reproducibility. The fact that the etch rate of aluminum films normal to the wafer surface was constant with time while the lateral (undercutting) etching rate decreased with decreasing pressure suggests the model shown in Fig. 5, which shows the flux of hydrogen bubbles (open circles) and ions of phosphoric acid (filled circles) during the etching. It is clear from pressure and time variations of the etch rate that the removal rate of hydrogen bubbles through the very narrow channel region (1 ~m thick) beneath the photoresist can apparently be restrained with decreasing pressure. Detailed features of this model are reported elsewhere (3). ConclusionsThe consideration of the evacuated wet etching of A1/Si (2%) electrodes resulted in the following conclusions.1. The etch rate of aluminum films normal to the wafer surface was nearly constant at a value of approximately 0.18 ~m/min over the pressure range studied.2. The amount of lateral etching in the grooves decreased with decreasing pressure, resulting in increased linewidth. Typical undercutting of the conventional (isotropic) wet etching was 0.8 ~m. This was reduced to 0.42 ~m at 9 torr. Thus, the etching has changed from isotropic to quasi-anisotropic.3. Uniformity of lateral etching within a wafer was also improved with decreasing pressure. The standard deviation for side etching within a wafer reaches a minimum value of 0.03 ~m (5%) at 30-100 torr. This is greater uniformity than conventional wet and dry etchings.4. Overetching for fine pattern aluminum electrodes can be reduced markedly by precisely monitoring the end point. This leads to 1.0-1.2 ~m linewidth etching including the deviation. ABSTRACTThe reaction of silane and nitrous oxide at high temperatures and low pressures was investigated for a large range of mole ratio of the reactants. For a nitrous oxide/silane mole ratio of approximately 100, silicon dioxide having the stoichiometric refractive index of 1.45 is obtained for growth...

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“…This temperature rise was not determined, but is probably less than 150"C. Following the aluminum deposition, an overlayer of silicon dioxide was deposited to a thickness of 1 pID in an LPCVD reactor described elsewhere. 3 An oxide layer ~ 0.1 flm thick was deposited at 250-300·C followed by deposition at 400 ·C to bring the total oxide thickness to about 1 pm. A two-step deposition procedure was investigated since it is considered to be most viable.…”

Section: Suppression Of Aluminum Hillock Growth By Overlayers Of Silimentioning

confidence: 99%

Suppression of aluminum hillock growth by overlayers of silicon dioxide chemically-vapor-deposited at low temperature

Learn¹

1986

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

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Modeling of the Reaction for Low Pressure Chemical Vapor Deposition of Silicon Dioxide

Cited by 27 publications

References 2 publications

On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂

On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂

Characterization of Oxide Growth at High Temperatures and Low Pressures from Silane/Nitrous Oxide Reaction

Suppression of aluminum hillock growth by overlayers of silicon dioxide chemically-vapor-deposited at low temperature

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Modeling of the Reaction for Low Pressure Chemical Vapor Deposition of Silicon Dioxide

Cited by 27 publications

References 2 publications

On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2

On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2

Characterization of Oxide Growth at High Temperatures and Low Pressures from Silane/Nitrous Oxide Reaction

Suppression of aluminum hillock growth by overlayers of silicon dioxide chemically-vapor-deposited at low temperature

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On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂

On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂