Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

N and p-type doping of PECVD a-SiC:H obtained under “silane starving plasma” condition with and without hydrogen dilution

“…This behavior is probably related to effusion effects induced by the thermal annealing process. In fact, as has been reported for c-Si [20], the diffusion coefficient of BF 2 + implanted B is lower than that of B + implanted B. Based on this, we believe that in our films the fluorine presence could also reduce the boron diffusion.…”

A Study on Distributions of Boron Ions Implanted by Using B and BF2Dual Implantations in Silicon

“…For the fabrication of complementary metal-oxide semiconductor (CMOS) devices, the source and drain regions can be formed by using BF 2 , B, P and implantations for p + doping [1][2][3][4][5][6]. For ultra-shallow junctions, BF 2 impurities are implanted instead of B, and the implanted wafers are annealed for the electrical activation in a N 2 ambient.…”

“…where the first moment R p (projected average range) is the average range under normal implantation, the second moment ΔR p (standard deviation) represents the profile width, the third moment γ (skewness) indicates the asymmetry of the profile, and the fourth moment β (kurtosis) represents the extent of profile sharpness in the peak-concentration area. A gaussian profile has only two parameters due to symmetry, and the equation can be expressed as, (6) The projected average range (R p ) of the Gaussian profile is located near the peak concentration.…”