Modeling of threading dislocation reduction in growing GaN layers

Mathis, S.K.; Романов, А. Е.; Chen, L.F.; Beltz, Glenn E.; Pompe, W.; Speck, James S.

doi:10.1016/s0022-0248(01)01468-3

Cited by 173 publications

(122 citation statements)

References 26 publications

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“…This is also seen in the symmetric 0008 topograph, due to the %10 À 12 deviation of the threading mixed dislocation line vector l from ½0001 towards its Burgers vector. 27,28 Since the edge component of the mixed dislocation Burgers vector 1 3 h11 20i has six different orientations, the resulting inclination related contrast must also have six orientations. The six black to white contrast directions observed consistently in the recorded topographs are presented schematically in Figure 4.…”

Section: Theory and Image Simulationmentioning

confidence: 99%

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

Sintonen

Rudziński

Suihkonen

et al. 2014

Journal of Applied Physics

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The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results

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Section: Theory and Image Simulationmentioning

confidence: 99%

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

Sintonen

Rudziński

Suihkonen

et al. 2014

Journal of Applied Physics

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“…The commercial LEDs are generally grown on sapphire substrates where the huge lattice mismatch between GaN and sapphire substrate will lead to a high density of threading dislocations (TDs). 2 In addition, the lattice mismatch between GaN and InGaN will induce the piezoelectric field in the InGaN layer and lead to quantum-confined Stark effect (QCSE). 3 The QCSE separates electron and hole wavefunctions which reduces the radiative recombination efficiency, and TDs can act as a carrier leakage path to influence the device reliability as well.…”

Section: Introductionmentioning

confidence: 99%

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Hsu

et al. 2016

AIP Advances

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In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.

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“…This explains the trend, for mixed TDs, to have directions systematically misoriented with respect to the c axis, for example, [2]. When = 0 the density b( ) becomes simple to express because the calculation shows that the energy coefficient matrix attached to an infinitesimal dislocation placed in the plane = 0 is no more depending on its orientation .…”

Section: Advances In Condensed Matter Physicsmentioning

confidence: 96%

“…The growth of GaN can be stabilized by epitaxial growth on bulky GaN substrates or a foreign substrate, for example, (111)Si, SiC, or sapphire [2,4,5,15]. An investigation on GaN thin films is of particular interest because of its TDs that have anisotropic electrical properties regarding cathodoluminescence and photoluminescence.…”

Section: Application To Ganmentioning

confidence: 99%

“…Epitaxial growth of semiconductor materials offers opportunities in combining and modifying structural and electronic parameters [1][2][3][4][5]. Unfortunately, the thin crystalline film deposited on the substrate often contains high densities of dislocations piercing the free surface, the so-called threading dislocations (TDs), which affect adversely device properties.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

Neily

Dhouibi

Bonnet

2018

Advances in Condensed Matter Physics

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Inclined threading dislocations (TDs) piercing the oriented free surface of a crystal are currently observed after growth of oriented thin films on substrates. Up to date the unique way to treat their anisotropic elastic properties nearby the free surface region is to use the integral formalism, which assumes no dislocation core size and needs numerical double integrations. In a first stage of the work, a new and alternative approach to the integral formalism is developed using double Fourier series and the concept of a finite core size, which is often observed in high-resolution transmission electron microscopy. In a second stage, the integral formalism and the Fourier series approaches are applied to the important case of a TD piercing the basal free surface of a hexagonal crystal. For this particular geometry, easy-to-use expressions are derived and compared to a third approach previously known for a plate-like crystal. Finally, the numerical interest and the convergence of these approaches are tested using the basal free surface of the GaN compound, in particular for TDs with Burgers vectors c and (a + c).

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Modeling of threading dislocation reduction in growing GaN layers

Cited by 173 publications

References 26 publications

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

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