Modeling Photocurrent Spectra of Single-Color and Dual-Band HgCdTe Photodetectors: Is 3D Simulation Unavoidable?

Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Wollrab, R.; Ziegler, Johann

doi:10.1007/s11664-014-3252-9

Cited by 11 publications

(2 citation statements)

References 26 publications

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“…We demonstrated in a previous work 16 that 2D simulations can reliably reproduce the experimental dark currents of the photodetectors under investigation without the computational cost of a full 3D description, the only requirement being axial symmetry of the device. Therefore, our present analysis is based on the 2D numerical solution of the driftdiffusion (DD) equations using the finite-element method.…”

Section: Simulation Of the Low Reverse Bias Regimementioning

confidence: 94%

Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors

Vallone

Mandurrino

Goano

et al. 2015

Journal of Elec Materi

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A combined experimental and numerical simulation study is presented on two sets of nominally identical Hg 1Àx Cd x Te single-color back-illuminated midwaveinfrared n-on-p photodetectors grown by liquid-phase epitaxy, p-doped with Hg vacancies and with Au, respectively. The present numerical model includes a novel formulation for band-to-band tunneling, which overcomes the intrinsic limitations of the classical Kane description without introducing numerical issues typical of other approaches. Our study confirms that adopting n-on-p architectures, avoiding metal vacancy doping, and reducing the acceptor density in the absorber region are prerequisites for obtaining high-operating-temperature photodetectors. A significant contribution to the dark current in both sets of devices is attributed to impact ionization, crucial to obtain a satisfactory explanation for the measured characteristics also at low to intermediate bias.

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Section: Simulation Of the Low Reverse Bias Regimementioning

confidence: 94%

Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors

Vallone

Mandurrino

Goano

et al. 2015

Journal of Elec Materi

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“…However, in the case of avalanche photodiodes, this phenomenon is very dangerous for their proper operation (Niclass et al 2005;Rech et al 2008). The electric cross-talk was widely studied (D'Orsogna et al 2008, Vallone et al 2014, 2018. Recently, works on the phenomenon of the optical cross-talk were mainly concerning the avalanche photodiodes.…”

Section: Optical Cross-talkmentioning

confidence: 99%

Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes

Jóźwikowska

Jóźwikowski

2019

Opt Quant Electron

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The effect of photon reabsorption (recycling) on photoelectric parameters of non-equilibrium P + nN + photodiodes, for example the pixels of the detector array, was analyzed. We solved the system of transport equations additionally extended by two balances equations for photons. It was shown that the density of photons in photodiodes is strongly dependent on the concentration of charge carriers. This phenomenon results in a drastic reduction in the rate of radiative recombination and generation in analyzed photodiodes. Additionally, the phenomenon of optical crosstalk between the nearest pixels in the matrix was examined. The increase in the dark current caused by this phenomenon was estimated. It depends on the size of the pixel, the distance between pixels, and the value of bias voltage. The increase in the current is around 0.5% for a pixel with surface 10 × 10 µm 2 , and around 1% for one with 5 × 5 µm 2 , both reverse biased with 0.2 V. Keywords Non-equilibrium mode of operation • HgCdTe photodiodes • Reabsorption effect • Optical crosstalk This article is part of the TopicalCollection on Numerical Simulation of Optoelectronic Devices,NUSOD' 18.

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Non-Monochromatic 3D Optical Simulation of HgCdTe Focal Plane Arrays

Vallone

Palmieri

Calciati

et al. 2018

Journal of Elec Materi

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Modeling Photocurrent Spectra of Single-Color and Dual-Band HgCdTe Photodetectors: Is 3D Simulation Unavoidable?

Cited by 11 publications

References 26 publications

Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors

Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors

Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes

Non-Monochromatic 3D Optical Simulation of HgCdTe Focal Plane Arrays

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