Modeling Physical Characteristics of Mosfets with Generalized Logistic Functions

Abstract

The improved surface potential and charge based MOSFET models have been developed in this work. Compared to the corresponding compact models, the improvement consists in implementation of generalized logistic (GL) functions of the second type in fitting of two important smoothing factors. New GL functional forms of these factors enable the control of continuality of the surface potential (SP), inversion charge density (ICD) and drain current in entire useful region of MOSFET operation. Beside the successful following of the changes in specific technology characteristics of MOSFET devices, the GL smoothing factors also provide continuous and various transitions of the SP and ICD between weak and strong inversion region. Satisfactory matches of the simulated SP, ICD and drain current values with numerical data indicate on suitability of introducing GL functions in MOSFET modeling.