Modeling SiC MPS diodes

Abstract

This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification of the model causing the improvement of its accuracy is proposed. The diode IDT06S60C is chosen for investigation. Index Terms -SiC MPS diodes, SPICE, modelingIn this model three essential blocks: the electrical model of the Schottky diode (XSDP), the electrical model of the p-i-n diode (XPND), the model of terminals (MW) and the device

Investigations of SiC merged pin Schottky diodes under isothermal and non‐isothermal conditions

“…The simplified network representation of the d.c. ETM of the SiC MPS diodes worked out by Infineon Technologies 11 is shown in Figure 1. One should be noticed that the complete model of the SiC MPS diodes (with network modeling dynamic properties of these diodes) is described in 12.…”

“…In the investigated model proposed by Infineon Technologies the constant current of the Schottky junction, modeled by the source G SCHOTTKY , is given by 11, 12: where T is the temperature ( T ≡ T j ), u sch is the voltage on the source G SCHOTTKY , A 0 is the Richardson's constant, FLCH is the coefficient of the device multiplication factor, k is the Boltzmann's constant, q is the electron charge, ϕ SiC is the Schottky junction potential, AA , AB , AC , α 1 , and W X1 are the parameters of the model, whereas Q TOT ( x ) is the function modeling the non‐linear charge of the Schottky junction 12.…”

“…In turn, the current of the controlled source G DO is expressed by: where τ T is the temperature dependence of the lifetime of the minority carriers given in 12, and I smg is the model parameter.…”

“…The current of the source G IQ is equal to the current measured by the voltage source V IDO , whereas the current of the source G IQ2 is of the form: where T d represents the diffusion time given in 12.…”