Investigations of SiC merged pin Schottky diodes under isothermal and non‐isothermal conditions

Abstract

SUMMARYThe paper concerns the problem of SPICE modeling of the merged pin Schottky (MPS) diodes. In the paper, the SPICE electrothermal model (ETM) of the SiC MPS diodes proposed by Infineon Technologies is investigated. The model was verified experimentally by comparing the calculated and the measured d.c. characteristics of the diode IDT06S60C. Some modifications of the model resulting in the improvement of its accuracy at d.c. analysis are proposed.

Compact electrothermal model of laboratory made GaN Schottky diodes

“…silicon carbide (SiC) or gallium nitride (GaN), are increasingly used (Baliga, 2013; Bhatnagar and Baliga, 1993; Roschke and Schwierz, 2001; Sheng, 2009). Schottky diodes made of these materials are characterised among others with a considerably higher admissible value of reverse voltage than the classical silicon diodes (Zhang et al , 2002; Starzak et al , 2013; Zarębski and Dąbrowski, 2011; She et al , 2017; Kruszewski et al , 2019; Sun et al , 2019). An essential advantage of semiconductor devices made of SiC or GaN is also a potentially high value of the admissible internal temperature of devices made of these materials (Zhang et al , 2002; Buttay et al , 2012; Dimarino et al , 2017; Baliga, 2013; Soh et al , 2019; Bhatnagar and Baliga, 1993; Roschke and Schwierz, 2001).…”

“…Particularly, models of power semiconductor devices, to which GaN Schottky diodes belong, should take into account also thermal phenomena. Models taking into account these phenomena are called electrothermal models (Zarębski and Dąbrowski, 2011; Zarębski and Górecki, 2007; Górecki and Górecki, 2017; Mawby et al , 2001; Zarębski and Górecki, 2009; Janicki et al , 2014;Yang et al , 2019; Wei et al , 2019; Górecki and Detka, 2019; Górecki, 2015; Starzak et al , 2018; Jarndal, 2019; Górecki and Ptak, 2018; Zubert et al , 2012).…”

“…In the literature, many papers can be found devoted to technologies of GaN Schottky diodes production (Zhang et al , 2002; Kisiel and Myśliwiec, 2017; Baliga, 2013; Kruszewski et al , 2018; Sun et al , 2019; Soh et al , 2019; Górecki et al , 2019) or to experimental investigations of electric and thermal properties of these devices (Kruszewski et al , 2019; Yildirim et al , 2010; Cinar et al , 2009), but there are no papers devoted to modelling these devices (Petrov, 2018). Only models of Schottky diodes made of silicon or silicon carbide are available in the literature (Starzak et al , 2013; Zarębski and Dąbrowski, 2011; Massmoundi et al , 2001; Wilamowski and Jaeger, 1997; Hapka et al , 2012; Mawby et al , 2001; Starzak et al , 2018; Zubert et al , 2012).…”