Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit

Abstract

Indium phosphide (InP)-based transistors play an important role in high-speed circuit and high-frequency analog circuit applications. Over the past few decades, terahertz heterojunction bipolar transistor (HBT) is increasingly developed. As a result, many reports of HBTs operating at terahertz region have flourished. Since the high-frequency circuit design faces the challenge from the lack of precise transistor models, this paper reviews the development of high-frequency modeling technologies of InP HBT at terahertz region. Processes in the development of small-signal models at terahertz frequencies, precise parasitic parameters extraction method, improvements in measurement, and the de-embedding technologies open up more opportunities for precise representation of InP HBTs. Finally, some excellent terahertz circuits based on InP HBT are reviewed.

Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors

“…98,100 InP Indium phosphide (InP) is a III-V compound semiconductor with a direct bandgap structure and high carrier velocities, making it well-suited to a range of developed and emerging technologies including fiber-optic communication, 119 highspeed transistors, 120 lasers, 94 photonic integrated circuits, 58 photodiodes, 121,122 and high-frequency electronics. 123,124 The high electron mobility and direct bandgap allow for the development of InP optical and electronic devices requiring high frequency switching 17 as devices can discharge capacitance at a sufficient rate, improving the RC delay faced by conventional CMOS-based devices. 125 To date, the only InP devices fabricated by MacEtch have been produced using an inverse progression MacEtch, due to mass transport limitations of the InP semiconductor leading to hole diffusion and etching in offcatalyst areas.…”

Systemic Overview of Microstrip Patch Antenna’s for Different Biomedical Applications

“…Some of the advantages of MSPA includes (1) These antennas are available in different shapes like triangular, circular, rectangular, elliptical extra and hence can be used in various body parts depending upon their way (2) These antennas have a low profile, inexpensive and simple manufacturing technique as they are made by using printed circuit technology (3) Mechanically robust (4) Compatible in both planar and non-planar surfaces (5) Compatible with MMIC (Monolithic microwave integrated circuit) designs (6) Smaller in size and lighter in weight (7) Used in medical detection of affected tissues (cancerous tissues) (8) Thin profile configuration design and not sensitive to human skin (9) No cavity backing, maintenance and installation required. 9,10,11,12,13 Because of these advantages, these days, we can see an increased interest in the field of electromagnetic waves used in medical therapy and diagnosis. In the treatment of some of the malignant tumours, we have seen that local and whole-body hyperthermia can successfully kill the malignant tumour tissues.…”

A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs

“…However, the modeling process is limited by previous on-wafer measurements techniques and de-embedding methods which are mostly still in sub-110 GHz region nowadays. [8][9][10][11] Recently, efforts on developing InP device models valid up to hundreds of gigahertz are in rapid progress, 12,13 which further inspire corresponding needs for highfrequency de-embedding techniques.…”