Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

Makarov, Alexander; Kaczer, B.; Roussel, Ph.; Chasin, Adrian; Grill, Alexander; Vandemaele, Michiel; Hellings, Geert; El-Sayed, Al-Moatasem; Linten, Dimitri; Tyaginov, Stanislav

doi:10.1109/irps.2019.8720584

Cited by 8 publications

(11 citation statements)

References 34 publications

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“…This means that in the operating regime I d,lin variability reduces and this peculiarity was reported in experimental papers by three different groups [29,31,79]. Note also that in our previous publications [23,25] we showed that degradation characteristics obtained for more aggressive HC stress conditions and at the milder operating regime obey distributions with different shapes. This is consistent with our current results.…”

Section: Resultssupporting

confidence: 72%

“…The device structure generated by Sentaurus Process with continuous doping profiles was used as a template to generate 200 instantiations with different configurations of discrete random dopants [23,25]. To achieve this goal, for each mesh cell of the initial device we multiplied the local doping concentration by the volume of this cell, thereby obtaining the mean value of the number of dopants contained in this cell.…”

Section: The Stochastic Model For Hcdmentioning

confidence: 99%

“…The stochastic version of our HCD model (which is described in greater detail in [ 23 , 25 ]) is derived from the deterministic approach to HCD simulations validated against data acquired in devices of different types, which include planar FETs [ 32 , 33 ], power laterally-diffused metal-oxide semiconductor transistors [ 34 , 35 ], FinFETs [ 36 ] and nanowire FETs [ 37 ]. To accurately describe the complex physical picture behind HCD, this approach captures and links carrier transport, a microscopic description of defect generation rates, and modeling of the degraded devices, see Figure 1 , which sketches the model structure.…”

Section: The Modeling Frameworkmentioning

confidence: 99%

“…As for hot-carrier degradation (HCD), which has been repeatedly declared to be the most detrimental reliability concern in ultra-scaled FETs [ 13 , 14 ], although HC induced variability was a subject of experimental [ 15 , 16 , 17 , 18 , 19 , 20 , 21 ] and modeling [ 22 , 23 , 24 , 25 , 26 , 27 , 28 ] studies, to the best of our knowledge there is a limited number of publications devoted to correlation between time-0 and HC stress induced transistor parameter distributions [ 29 , 30 , 31 ], and no simulation studies of this correlation have been performed so far. Schlünder et al [ 29 ] reported a strong correlation between parameters in the

and

tuples (here t is the stress time, while

is the drain current).…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we perform the first theoretical study of the correlation between time-0 values of the linear and saturation drain currents (

and

, respectively) in n-channel FinFETs and relative drain current changes (

and

) induced by HC stress. For this we employ our approach to stochastic HCD modeling [ 23 , 25 , 26 ]. We consider the roles of impacts of random dopants and random traps on this correlation.…”

Section: Introductionmentioning

confidence: 99%

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Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

et al. 2020

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We identify correlation between the drain currents in pristine n-channel FinFET transistors and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we employ our statistical simulation model for hot-carrier degradation (HCD), which considers the effect of random dopants (RDs) on HCD. For this analysis we generate a set of 200 device instantiations where each of them has its own unique configuration of RDs. For all “samples” in this ensemble we calculate time-0 currents (i.e., currents in undamaged FinFETs) and then degradation characteristics such as changes in the linear drain current and device lifetimes. The robust correlation analysis allows us to identify correlation between transistor lifetimes and drain currents in unstressed devices, which implies that FinFETs with initially higher currents degrade faster, i.e., have more prominent linear drain current changes and shorter lifetimes. Another important result is that although at stress conditions the distribution of drain currents becomes wider with stress time, in the operating regime drain current variability diminishes. Finally, we show that if random traps are also taken into account, all the obtained trends remain the same.

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Section: Resultssupporting

confidence: 72%

Section: The Stochastic Model For Hcdmentioning

confidence: 99%

Section: The Modeling Frameworkmentioning

confidence: 99%

and

tuples (here t is the stress time, while

is the drain current).…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we perform the first theoretical study of the correlation between time-0 values of the linear and saturation drain currents (

and

, respectively) in n-channel FinFETs and relative drain current changes (

and

) induced by HC stress. For this we employ our approach to stochastic HCD modeling [ 23 , 25 , 26 ]. We consider the roles of impacts of random dopants and random traps on this correlation.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations