Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale

Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation

“…Chemical mechanical polishing (CMP) is a major semiconductor manufacturing process, entailing micro-polishing used to obtain uniform surfaces of inter-metal dielectrics (IMD) or inter-level dielectrics (ILD) during integrated circuit (IC) fabrication [1]. CMP ensures both the local and global flatness of a semiconductor surface via the mechanical downward force of a slurry abrasive and the chemical oxidation of the wafer surface.…”

Research on the molecular scale material removal mechanism in chemical mechanical polishing

“…As the knowledge of the CMP process and role of consumable improved over years, much subsequent work has paid attention to the material removal from the molecular-scale perspective [14][15][16][17][18][19][20] . The CMP processing includes a large number of embedded abrasive particles participating in the material removal.…”

Study of COD and turbidity removal from real oxide-CMP wastewater by iron electrocoagulation and the evaluation of specific energy consumption

“…The CMP process has emerged as a solution for surface global planarization, and has been widely used in fabricating microchips for integrated circuits (IC), semiconductors, hard disks, optical glass, and micro-electromechanical systems [1]. The chemical-mechanical synergistic effect on CMP processes is important for a wide range of potential applications [2,3]. The process is mainly used for "polishing" the device side of a semiconductor wafer via the mechanical downward force of a slurry abrasive in association with the chemical oxidation of the wafer surface.…”