Modeling the heavy ion upset cross section

Radiation Effects in Si CMOS Platforms

“…The logical extension of this approach is to integrate the RPP model over the cross section curve [23], [115], [116], [111]. The first step is to normalize the cross section curve to the maximum cross section and fit it with an analytic representation.…”

“…IRPP model has been implemented in CRÈME96 [25], the CHIME model [26], the Heavy Ion Cross Section for Single Event Upset (HICUP) model [115], [116] and OMERE [30].…”

Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs

“…The sensitive volume is used to determine how much energy is deposited from an ion event in a region of interest in a semiconductor device. The methods of obtaining the dimensions of the RPP have been refined and debated since its inception [25][26][27][28][29][30][31], but are typically defined by a combination of theory, technology process information, and experimental analysis. The charge collected from the energy deposited in the SV must be greater or equal to the critical charge of the device for a SEU to be recorded.…”

“…Typically, test data are plotted by assuming the "thin" RPP model in which inverse cosine scaling rules are used to normalize cross section data taken at off-normal angles [29]. Effective LET is defined as the LET divided by cos(θ).…”

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

“…This is due to the ions that pass through the edge of the sensitive volume, known as edge effects. One approach to dealing with edge effects is given in [62 ] and the references therein.…”