Radiation Effects in Si CMOS Platforms

Abstract

IntroductionPredicting the rate of occurrence of single event effects (SEEs) By the early 1990s it was becoming clear that CRÈME and the other early models needed https://ntrs.nasa.gov/search.jsp?R=20120016823 2018-05-12T09:45:40+00:00Z

Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies

“…14 to 17 would indicate that the device is expected to become progressively more resistive at the gate input, which is exacerbated in large gate width devices. This is consistent with previous findings [17] that smaller devices are less susceptible to TID damage. On the contrary, the output impedance is expected to remain largely unaffected by TID, as is evident from Figs.…”

“…The trapped charges can shift the threshold voltage, increasing Rg and reducing gm. Trapped charges can further cause a reduction in the mobility of the device and an increase in the surface resistivity in the lightly doped drain [17], [18]. An increase in the surface resistivity of the drain leads to an increase in Rds and Rbb.…”