Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data

Ho, Pauline; Johannes, Justine E.; Buss, Richard J.; Meeks, Ellen

doi:10.1116/1.1387048

Cited by 118 publications

(58 citation statements)

References 75 publications

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“…In addition, the gas phase chemistry reactions related to the etching products O 2 and SiF x are also taken into account in the model. [35,37,40] It is generally very difficult to dissociate CF 4 into C (and thus C 2 ) directly since it needs to go through a series of dissociative reactions that rarely occurs. This is also confirmed by the experimental observation in a CF 4 ICP reactor, [41] under similar test conditions, in which only an extremely small amount of ''C'' was found.…”

Section: Gas-phase Reactionsmentioning

confidence: 99%

Parallel 2D Axisymmetric Fluid Modeling of CF₄ Discharge in an Inductively Coupled Plasma Source During SiO₂ Etching

Chiu¹,

Chiang

Hung³

et al. 2014

Plasma Processes & Polymers

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A parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas-phase and 27 surface reactions with site-balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiF x and O 2 , are found to be appreciable ($10%) compared to the precursor near the substrate. The predicted density trends, such as CF x þ and CF x (x ¼ 1-3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO 2 substrate is presented and discussed in detail.

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Section: Gas-phase Reactionsmentioning

confidence: 99%

Parallel 2D Axisymmetric Fluid Modeling of CF₄ Discharge in an Inductively Coupled Plasma Source During SiO₂ Etching

Chiu¹,

Chiang

Hung³

et al. 2014

Plasma Processes & Polymers

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show abstract

“…The material removal mechanisms are based on different chemical reactions between the fluorine radicals and the workpiece material, consisting mainly of silicon compounds like Si, SiO 2 , SiC and is well known and established for decades in reactor dry etching of semiconductor manufacturing industry [9][10][11][12][13][14][15][16]. In the case of fused silica the simplified main reaction is…”

Section: Plasma Jet Machining Processmentioning

confidence: 99%

New Process Simulation Procedure for High-Rate Plasma Jet Machining

Meister

Arnold

2010

Plasma Chem Plasma Process

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Surface figuring using chemically reactive plasma jet machining (PJM) is a promising non-conventional technology for deterministic ultra-precision machining of optical components. Based on chemical reactions between plasma generated radicals and the surface atoms this technology is capable to fabricate complex shaped free form surfaces. Since the material removal rate during PJM depends strongly on the surface temperature which itself is influenced by the jet heat flux to the surface, the arising nonlinear effects on the etch result have to be regarded. Conventionally applied dwell time calculation algorithms do not consider those effects leading to significant machining errors in some cases. In order to improve the machining procedure with respect to deterministic material removal yielding predictable results a process simulation model has been developed. This model considers spatio-temporal variations of surface temperature and temperature dependent material removal and is able to predict the final workpiece topography after machining.

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“…present a detailed mechanism for the reaction. (Ho, Johannes et al 2001) The silicon dioxide provided very high etch selectivity, approximately 1:140, in the ICP Cr etch, using a Cl 2 /O 2 chemistry. The photoresist was not removed prior to the Cr etch and was etched away by the Cl 2 plasma.…”

Section: Microfabrication Of a Self-aligned Aluminum Ion Trapmentioning

confidence: 99%

Micro mass spectrometer on a chip.

Cruz¹,

Blain²,

Fleming³

2005

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Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data

Abstract: Articles you may be interested inLocalized and ultrahigh-rate etching of silicon wafers using atmospheric-pressure microplasma jets

Cited by 118 publications

References 75 publications

Parallel 2D Axisymmetric Fluid Modeling of CF₄ Discharge in an Inductively Coupled Plasma Source During SiO₂ Etching

Parallel 2D Axisymmetric Fluid Modeling of CF₄ Discharge in an Inductively Coupled Plasma Source During SiO₂ Etching

New Process Simulation Procedure for High-Rate Plasma Jet Machining

Micro mass spectrometer on a chip.

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Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data

Abstract: Articles you may be interested inLocalized and ultrahigh-rate etching of silicon wafers using atmospheric-pressure microplasma jets

Cited by 118 publications

References 75 publications

Parallel 2D Axisymmetric Fluid Modeling of CF4 Discharge in an Inductively Coupled Plasma Source During SiO2 Etching

Parallel 2D Axisymmetric Fluid Modeling of CF4 Discharge in an Inductively Coupled Plasma Source During SiO2 Etching

New Process Simulation Procedure for High-Rate Plasma Jet Machining

Micro mass spectrometer on a chip.

Contact Info

Product

Resources

About

Parallel 2D Axisymmetric Fluid Modeling of CF₄ Discharge in an Inductively Coupled Plasma Source During SiO₂ Etching

Parallel 2D Axisymmetric Fluid Modeling of CF₄ Discharge in an Inductively Coupled Plasma Source During SiO₂ Etching