Modelisation and Simulation of Cgs.op and Cgd.op Capacities of GaAs MESFETs OPFET

Abstract

An analytical of new theoretical model has been developed to study the Capacitance characteristics for an optically controlled Gallium Arsenic Metal Semiconductor Field Effect Transistor MESFET (OPFET) doped uniformly. The model takes the effects of photoconductive and photovoltaic into account that determine the device characteristics in the illuminated condition. It has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both of the gate-source capacitances gate-drain capacitances under dark and illumination condition. The numerical results have also been compared with the reported data experience in the literature and a good agreement is observed.