We present in this paper an analytical model of the current -voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel.we propose In this framework an algorithm of simulation based on mathematical expressions obtained previously. The results obtained of the model are discussed and compared with those of the experimental data reading obtained from the literature [1], The agreement has been shown to be good.

An analytical of new theoretical model has been developed to study the Capacitance characteristics for an optically controlled Gallium Arsenic Metal Semiconductor Field Effect Transistor MESFET (OPFET) doped uniformly. The model takes the effects of photoconductive and photovoltaic into account that determine the device characteristics in the illuminated condition. It has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both of the gate-source capacitances gate-drain capacitances under dark and illumination condition. The numerical results have also been compared with the reported data experience in the literature and a good agreement is observed.

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