Modelling and off-line optimization of a 300 mm rapid thermal processing system

Tillmann, Andreas; Buschbaum, S.; Frigge, S.; Kreiser, U.; Löffelmacher, D.; Theilig, Theresa; Schmid, Peter J.

doi:10.1016/s1369-8001(98)00029-8

Cited by 6 publications

(1 citation statement)

References 2 publications

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“…However, the mastering of the piloting requires a very thorough preliminary optimization and aging of the lamps is accelerated for the ones supplied with higher power. Rotating the wafer allows to homogenize the temperature circularly but the temperature difference between the centre and the edge of the wafer stays unchanged [9,23,24]. Using a susceptor enables to get a better temperature homogeneity [25], nevertheless the addition of a susceptor has the drawback of reducing the rapidity of the heating because thermal inertia becomes more important.…”

Section: Introductionmentioning

confidence: 99%

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Logerais

Riou

Delaleux

et al. 2015

Applied Thermal Engineering

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Rapid thermal processes are used in various key stages in the microelectronics industry. In this study, the heat transfer in a rapid thermal system is modelled with the finite volume method. The influence of the radiative properties of the quartz window on the thermal profile of the silicon wafer is first investigated. The obtained temperatures are interpreted by analyzing the radiative properties according to wavelength and temperature. The wafer temperature profile for a non-optimized heating in steady-state is explained by a four-phase scheme where the radiative heat fluxes are depicted. From this scheme, a filter on the underside of the quartz window is envisaged to achieve temperature uniformity for the wafer. Two configurations are tested, one where the filter covers the entire lower surface of the quartz window and another where it is placed in a ring close to the reactor wall to confine the infrared radiations with wavelengths beyond 2.6 mm in order to raise the temperature at the edge of the wafer. Simulations demonstrate that the latter modification enables a more significant improvement of the wafer temperature homogeneity with less than 1% dispersion. The implementation of the filtering window is also discussed.

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Section: Introductionmentioning

confidence: 99%

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Logerais

Riou

Delaleux

et al. 2015

Applied Thermal Engineering

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Challenges and current status in 300 mm rapid thermal processing

Glück

Lerch

Löffelmacher

et al. 1999

Microelectronic Engineering

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Real Time Dynamic Programming Control of Rapid Thermal Processing Furnaces

Mouawad¹,

Nemer²,

Khoury³

2013

Numerical Heat Transfer, Part A: Applications

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International audienceIn the rapid thermal processing of a semi-conductor wafer, the temperature of the latter has to follow a preset time evolution profile while keeping spatial uniformity. A model-based open loop control strategy is presented in all its steps. A global and sufficiently accurate thermal model, based on the component interaction network, is used for the prediction of the required instantaneous heat flux distribution gained by the wafer. The same model is used to calculate the distribution of the net heat flux gainedby the wafer for each radiant emitter. The optimal combination of input powers to the radiant emitters is then determined using real time dynamic programming. It consists in minimizing the maximum difference between the required heat flux distribution and the one corresponding to the tested combination of input powers at each time step. The objective function is corrected according to the preceding time step errors, in a way to avoid cumulative temperature deviation. The solution algorithm is described, step by step, and a test case is treated. The results show good temperature tracking and uniformity

show abstract

Modelling and off-line optimization of a 300 mm rapid thermal processing system

Cited by 6 publications

References 2 publications

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Challenges and current status in 300 mm rapid thermal processing

Real Time Dynamic Programming Control of Rapid Thermal Processing Furnaces

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