Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film

Sonmez, Bedri Gurkan; Ertop, Ozan; Mutlu, Senol

doi:10.1038/s41598-017-12439-8

Cited by 25 publications

(20 citation statements)

References 30 publications

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“…Subsequently, titanium (Ti) electrodes were placed in contact with graphene by a conventional electron-beam lithography process [Figs. 1(a) and 1(b)] [8,9,13]. Owing to the natural formation of a thin oxide layer on Ti when exposed to air, this oxide was employed as a barrier for blocking the interaction between the water-gate and Ti electrodes.…”

Section: Methodsmentioning

confidence: 99%

Charge Carrier Density Tuning of Graphene by Water Gating

2019

Appl. Sci. Converg. Technol.

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In this work, the conditions of water-gated carrier density accumulation on graphene were investigated. In particular, either negative or positive electric potential in deionized water could be observed, leading to an increase or decrease in the hole charge carrier density, respectively. Furthermore, it was determined that the critical positive electric potential for water gating of graphene is required to return the accumulated carrier density back to its initial state. Taken together, these results provide valuable insight into the relationship between carrier accumulation and the deionized water gating method.

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Section: Methodsmentioning

confidence: 99%

Charge Carrier Density Tuning of Graphene by Water Gating

2019

Appl. Sci. Converg. Technol.

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“…The fabrication steps of the WG-FET were reported before [4]. The inverter configuration using a WG-FET and a pull-down resistor is given in Figure 2a.…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, its off-resistance Roff and gate capacitance C2 must be modeled as a distributed network as shown in Figure 2c. The equivalent capacitance C2eq in this distributed network can be approximated as (4) which gives the equation of the high-to-low propagation delay as 7 7…”

Section: Methodsmentioning

confidence: 99%

“…Water-gated field effect transistors (WG-FET) that use 16-nm-thick single crystalline silicon film as active layer have a high potential in chemical and biological sensors because of their liquid-solid interfaces and capability to form integrated read-out circuit [1][2][3][4]. In WG-FET, EDL capacitance at water/silicon interface is used as gate insulator, which allows easy and low-cost fabrication of a low voltage device with high channel control.…”

Section: Introductionmentioning

confidence: 99%

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Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)

2018

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This paper presents, for the first time, a displacement sensor with inherent read-out circuit using an inverter built with WG-FET that has 16-nm-thick single crystalline silicon film. In WG-FET, electrical double layer (EDL) capacitances are formed at water/silicon and water/top gate interfaces. These two capacitances and the resistance of the de-ionized (DI) water droplet build a first order RC network. Propagation delay of an inverter built with WG-FET depends on this RC constant. When the distance between top gate and silicon film changes, EDL capacitances remain the same, but resistance of the DI-water droplet changes. Accordingly, propagation delay of the inverter changes linearly with this distance. Increasing the distance from 400 µm to 1200 µm changes low-to-high propagation delay tplh of the inverter from 1.08 ms to 1.36 ms and high-to-low propagation delay tphl from 0.48 ms to 0.56 ms, which yields sensitivities of 0.35 µs/µm and 0.1 µs/µm, respectively.

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“…The possibility of detecting small changes in GFET transfer characteristics due to minute changes in the interfacial charge distribution that modulates the gate capacitance paves the way for ultrasensitive biosensing. Thus, EG-GFETs are ideal candidates for molecular sensing with electronic transduction [ 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors

et al. 2020

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This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues after graphene patterning and the dielectric passivation of metallic contacts. A graphene residue-free transfer process is achieved by using a pre-transfer, sacrificial metallic mask that protects the entire wafer except the areas around the channel, source, and drain, onto which the graphene film is transferred and later patterned. After the dissolution of the mask, clean gate electrodes are obtained. The multilayer SiO2/SiNx dielectric passivation takes advantage of the excellent adhesion of SiO2 to graphene and the substrate materials and the superior impermeability of SiNx. It hinders native nucleation centers and breaks the propagation of defects through the layers, protecting from prolonged exposition to all common solvents found in biochemistry work, contrary to commonly used polymeric passivation. Since wet etch does not allow the required level of control over the lithographic process, a reactive ion etching process using a sacrificial metallic stopping layer is developed and used for patterning the passivation layer. The process achieves devices with high reproducibility at the wafer scale.

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Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film

Cited by 25 publications

References 30 publications

Charge Carrier Density Tuning of Graphene by Water Gating

Charge Carrier Density Tuning of Graphene by Water Gating

Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)

Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors

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