Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters

Efthymiou, Loizos; Longobardi, Giorgia; Camuso, Gianluca; Hsieh, Alice Pei-Shan; Udrea, F.

doi:10.1109/smicnd.2015.7355211

Cited by 6 publications

(6 citation statements)

References 12 publications

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“…In our study, it is found that a fixed charge of −5 × 10 12 cm −2 and donor traps of 3 × 10 13 cm −2 gives the best fit of the simulation data with the GaN experimental data. [ 10 , 13 , 29 , 35 , 36 , 41 , 47 , 48 ].…”

Section: Resultsmentioning

confidence: 99%

“…Gallium nitride (GaN) is one of the superior materials for high frequency and high-power devices for future needs [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 ]. GaN material comes from the III-V group materials which possess the piezoelectric property and spontaneous property in nature, GaN devices such as HEMTs, Metal Insulator Semiconductor HEMTs (MIS-HEMTs) and also Schottky Barrier Diodes (SBDs) are profitable from the presence of large channel charge density (~1 × 10 13 cm −2 ) at the interface of AlGaN and undoped GaN (Two-Dimensional Electron Gas (2DEG)) region with unintentional doping in the device structure [ 9 , 10 , 11 , 12 , 13 , 14 ]. GaN HEMT devices have also proven to be the best candidate for operations in critical environments such as high temperature [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

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Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

et al. 2021

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This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges −5 × 1012 cm−2, donor-like traps −3 × 1013 cm−2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

et al. 2021

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“…Numerical simulations with TE, PF and FN emissions show that the second case is taking place in the HEMT under study, as Figure 7 indicates for reverse-biased gate (V GS = −5 V and V DS = 10 V), with the current density flowing through the barrier, under the gate, by the drain side. Gate leakage current has been already modeled analytically in a surface potential-based compact model [30], with TAT emission having been introduced in order to keep current continuity. However, for simplicity, it is proposed to introduce the gate leakage current into the compact model by a single and non-ideal continuous expression for the current of the gate-to-drain diode, which is given by:…”

Section: Parameter Value Unitmentioning

confidence: 99%

“…where j off corresponds to the gate leakage current density in subthreshold regime by PF and FN emissions, j s is the reverse saturation TE current density, and m is the non-ideality parameter for Schottky gates in AlGaN/GaN based HEMTs [30], which could be properly set when forward gate-to-drain current is available (which is not the case for typical operation regimes). For typical operation regimes of the HEMT (off, linear and saturation regimes), when the Schottky gate is reverse-biased, the absolute value of the current density of the drain-to-gate diode, j gd , can be approximated by…”

Section: Parameter Value Unitmentioning

confidence: 99%

DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

et al. 2018

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A DC leakage current model accounting for trapping effects under the gate of AlGaN/GaN HEMTs on silicon has been developed. Based on TCAD numerical simulations (with Sentaurus Device), non-local tunneling under the Schottky gate is necessary to reproduce the measured transfer characteristics in a subthreshold regime. Once the trap concentration and distribution are determined in the device, the resulting gate leakage current is modeled making use of Verilog-A, for typical operation regimes.

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“…Introduction: Many reports show that Schottky diode model have been studied for years [1]. In millimetre wave band, the diode package parasitic has a pronounced effect on multipliers performance.…”

mentioning

confidence: 99%

Simple and accurate design of GaAs Schottky diode model

Dou

2017

Electron. lett.

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Three GaAs Schottky diodes with different junction configurations are modelled. The main contribution of this Letter is the simplification and accuracy of the diode model, in which approximate materials are set to be the same permittivity in the 3D diode model and only four parameters are required in modelling the non-linear part of diode model. To validate the accuracy of the proposed models, one K band tripler and two W band triplers are designed and tested. The measured results agree well with the simulated results. It is envisaged that the method can be very useful for GaAs Schottky diode modelling.

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Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters

Cited by 6 publications

References 12 publications

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

Simple and accurate design of GaAs Schottky diode model

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