Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Kriplani, Nikhil M.; Bowyer, Stephen; Huckaby, Jennifer; Steer, M.B.

doi:10.1155/2011/830182

Cited by 8 publications

(8 citation statements)

References 12 publications

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“…Figure d includes a fit of the measured current ( I ) data using the Schottky model of a diode: I = I S (exp[ V /( nV T )]–1) with I S is the scale current, n is the ideality factor, and V T is the thermal voltage taken as V T = kT / q = 25.85 mV, with k the Boltzmann constant, T the absolute temperature, and q the absolute of the electron charge. We expanded the Schottky model by two terms, replacing V by V – I × R to account for a series resistance R of the junction and an additive V / V p × I p × (1 – exp[ V / V p ]) term to account for a tunneling current I p at reverse voltage V p through the thin diode layer Fitting the experimental data reveals a series resistance of ∼50 Ω, an ideality factor of 1.8, a scale current of 20 nA, and the tunneling behavior described by 2 μA at 2.4 V for I P and V P , respectively. These are excellent values for our prototypical device geometry.…”

Section: Experimental Sectionmentioning

confidence: 79%

“…Figure 4d includes a fit of the measured current (I) data using the Schottky model of a diode: I = I S (exp[V/(nV T )]−1) with I S is the scale current, n is the ideality factor, and V T is the thermal voltage taken as V T = kT/q = 25.85 mV, with k the Boltzmann constant, T the absolute temperature, and q the absolute of the electron charge. We expanded the Schottky model by two terms, replacing V by V − I × R to account for a series resistance R of the junction 38 and an additive 39 to account for a tunneling current I p at reverse voltage V p through the thin diode layer…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Yang

Coyle

Wurch

et al. 2021

ACS Appl. Mater. Interfaces

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Low turn-on (knee) voltage (∼0.3 V) Schottky-diode behavior of a four-layer (4L) MoS2/GaN junction is achieved by optimizing the in situ interface preparation of the GaN substrate prior to MoS2 overlayer growth in a vacuum system using metallic molybdenum and hydrogen sulfide gas as precursors. The process leads to a clean nitrogen-terminated GaN surface that bonds well to the MoS2 film revealing a 2 × 2 reconstruction at the interface observed in low-energy electron diffraction (LEED). Atomic force microscopy and X-ray photoelectron spectroscopy provide clear images of the GaN terraces through the MoS2 overlayer confirming close adhesion and absence of oxygen and other contaminants. Density functional theory calculations predict the formation of the 2 × 2 superstructure at a clean interface. Transport measurements show diode behavior at an on/off ratio of ∼105 for ±1 V with a forward direction for the positive voltage applied to the MoS2 layer. Combining transport and photoelectron spectroscopy measurements with theory, we deduce a Fermi-level position in the MoS2 gap consistent with interface charge transfer from MoS2 to the substrate. The high performance of the MoS2/Gan diode highlights the technological potential of devices based on GaN/MoS2 interfaces.

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Section: Experimental Sectionmentioning

confidence: 79%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Yang

Coyle

Wurch

et al. 2021

ACS Appl. Mater. Interfaces

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“…The current density of a tunnel diode can be expressed as the addition of three different currents based on quantum mechanical processes. The total current is an addition of p-n junction current (I diode ), the tunnel current (I tuneel ), and the excess current related to parasitic tunneling via impurities (I excess ): 39,[41][42][43] I total = I tunnel + I excess + I diode [2] where the tunnel current can be written as:…”

Section: Resultsmentioning

confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

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“…We present, for the first time, simulations of a high-frequency oscillator circuit containing a reconant tunnelding diode, based on a full Schrödinger-Poisson solver with transparent boundary conditions. Simplified tunneling diode oscillators have been considered in [28,29,30]. Our approach enables us to observe the complex spatio-temporal behavior of macroscopic quantities inside the resonant tunneling diode in an unprecedented way.…”

Section: Introductionmentioning

confidence: 99%

“…There exist several approaches in the literature to model a resonant tunneling diode. The simplest approach is to replace the diode by an equivalent circuit containing nonlinear current-voltage characteristics [28]. Another approximation is to employ the Wannier envelope function development [29].…”

Section: Introductionmentioning

confidence: 99%

Transient Schrödinger–Poisson simulations of a high-frequency resonant tunneling diode oscillator

Mennemann

Jüngel

Kosina

2013

Journal of Computational Physics

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Transient simulations of a resonant tunneling diode oscillator are presented. The semiconductor model for the diode consists of a set of time-dependent Schrödinger equations coupled to the Poisson equation for the electric potential. The one-dimensional Schrödinger equations are discretized by the finite-difference Crank-Nicolson scheme using memory-type transparent boundary conditions which model the injection of electrons from the reservoirs. This scheme is unconditionally stable and reflection-free at the boundary. An efficient recursive algorithm due to Arnold, Ehrhardt, and Sofronov is used to implement the transparent boundary conditions, enabling simulations which involve a very large number of time steps. Special care has been taken to provide a discretization of the boundary data which is completely compatible with the underlying finite-difference scheme. The transient regime between two stationary states and the self-oscillatory behavior of an oscillator circuit, containing a resonant tunneling diode, is simulated for the first time.

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Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Cited by 8 publications

References 12 publications

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Transient Schrödinger–Poisson simulations of a high-frequency resonant tunneling diode oscillator

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Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Cited by 8 publications

References 12 publications

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Transient Schrödinger–Poisson simulations of a high-frequency resonant tunneling diode oscillator

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device