Modelling of lattice damage accumulation during high energy ion implantation

Hecking, N.; Kaat, E.H. Te

doi:10.1016/0169-4332(89)90195-5

Cited by 12 publications

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“…At T.>100°C the inter-cascade rr-ibination rate i reaches saturation while the intra-cascade annihilation rate, as well as the mobility of vacancy complexes, increase significantly [5]. Assuming the activation energy for di-vacancy migration to be 0.18 eV [14], the corresponding diffusion length at 180°C is of the order of tens of urn.…”

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“…> the confines of the assumptions made these ratios are expected to be insensitive to the value of V ). Given the low probability of the non-lint; Q r phenomena occuring, the type and distribution of crystalline defects in the "as We refer phenomenologicaly to model [5] in an attempt to correlate the kinetics of point defects interaction with the observed morphology of the high energy implanted Si. According to model [5], the probabilities of Table I.…”

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Dynamics of lattice damage accumulation for MeV ions in silicon

Golanski¹,

Grob²,

Grob³

et al. 1992

Nuclear Instruments and Methods in Physics Research Section B:

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Although the domination of electronic stopping over nuclear stopping may be regarded as an important practical advantage for high energy (MeV) ion processing, exact knowledge of the doping introduced into the active regions as well as of the process-associated defects and their thermal stability is essential for an understanding of device performance. In the present work we review the results of our recent investigations into lattice damage accumulation in single crystal Si resulting from high energy ion implantation in the implantation temperature (T. ) range between liquid nitrogen temperature and 200°C.The ion species used were 1 MeV 0 + , 1.25 MeV Si and a.8 MeV Er +

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