Modelling of pulsed laser deposition of large area films

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

“…On the one hand, the application of the laser rastering technique integrated in PLD can achieve films which have a homogeneous thickness over the whole substrate. 16,29,30 On the other hand, we systematically study the surface morphologies, crystalline qualities, and interfacial properties of the as-grown GaN films by white-light interferometry, in situ RHEED, scanning electron microscopy (SEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction (HRXRD), and high-resolution transmission electron microscopy (HRTEM). This will be beneficial to researchers who want to understand the growth of GaN films on Cu substrates comprehensively.…”

Design and manufacture of functional catalyst-carrier structures for the bioorthogonal activation of anticancer agents

“…More details on the process have been reported. 36 The chamber was heated to 120 °C, vacuum flushed and left to cool down naturally to room temperature (24-48 h), which created a base pressure of 10 -9 mbar. The Pd target was placed 10 cm distant from the sample, and the laser (840 mW, GCR-5 solid state Qswitched Nd:YAG, Polaron C V T Ltd., UK & IFW Dresden, GE) emitted 10 pulses/s with visible light at 532 nm wavelength.…”

Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

“…Recently, the application of the laser rastering technique integrated into PLD overcomes the shortcoming of the inhomogeneity of large-scale films grown by traditional PLD. [31][32][33] However, one can hardly find any reports on the growth of large-scale AlN epitaxial films on Si substrates by PLD. In this work, we report on the growth of large-scale AlN epitaxial films on Si substrates by PLD with laser rastering.…”