Modelling of radiation-induced charge trapping at the Si*SiO2 interface of MOS structures

Abstract

The effect of high‐temperature treatments in inert atmosphere, performed after deposition of phosphorus‐doped polycrystalline silicon, on the accumulation of radiation‐induced charge in Si*SiO2Si structures is investigated. It is shown that these treatments lead to an increase of hole trap concentration on both SiO2 interfaces, and the hole trap creation at the Si*SiO2 interface is related with phosphorus diffusion from Si* into SiO2. A model of charge accumulation at the Si*SiO2 interface is proposed, which satisfactorily explains experimental data.

Acousto-electric study of interface trapping defects in GaAs epitaxial structures

“…In the following we will consider an n-type semiconductor. Then it holds = 1 N c V T S n e Et=kT (3) where N c is the density of states of the conductivity band, V T is a thermal velocity of free electrons, k is Boltzmann's constant, T is temperature, E t is an energy depth of the electronic trap level counted from the edge of conductivity band and S n is an e ective cross section of electron capture by trap centers.…”

“…YA. OLIKH, H. G. WALTHER cm 3 . The second one labeled as GA{2 consists of a 400 m thick GaAs{substrate with a 1 m thick epitaxial layer of n-GaAs on it.…”

“…Consequently, for deep levels (E t >> kT ) and small temperature changes the temperature dependence of (N c V T S n ) can be neglected in equ. (3). Having two times τ 1 and τ 2 for two different temperatures T 1 and T 2 , we can to calculate E t by equ.…”

“…Most of them, including modern Scanning Tunneling Microscopy techniques, allow to characterize surface defects. At the same time multilayer and epitaxial semiconductor structures are strongly influenced by defects [1][2][3] which can be located at the interfaces between epilayers and substrate. Up to now no appropriate experimental methods exist to characterize these interface defects.…”