Modelling of sputtering yield amplification effect in reactive deposition of oxides

Sputter yield amplification by tungsten doping of Al2O3 employing reactive serial co-sputtering: process characteristics and resulting film properties

“…This means that for large bi-layer thicknesses the doping material is sputtered away instead of being implanted to increase the erosion rate of the target material below. This fact is in agreement with the findings in [16] that the efficiency of doping in terms of the sputter yield amplification saturates upon increasing the Tungsten doping level. 2.…”

“…At the same time the sputter yield amplification converges as P W increases, which is demonstrated in figure 7. This is in agreement with simulations [16] which show that the Al sputter yield is maximal at about 2-3% of W in Al and decreases for larger concentrations. This is because in serial co-sputtering an increase in the W concentration correlates with an increase of the thickness of the W layer deposited each turn.…”

“…1. In [16] (figure 1 therein) it has been demonstrated that there is an optimum doping concentration where the rate enhancement exhibits a maximum. At higher doping levels the SYA becomes less efficient and instead the dopant rather contributes to the film composition only.…”

Sputtering of SicGe1−c nanospheres

“…Sputter yield amplification has been observed both in experiments [60,61] and MC computer simulations [59,60,62,63] of the sputtering of binary materials. The effect may be considerably stronger than the one observed by us here.…”

Modelling of hot target reactive sputtering

“…The private physical models were proposed in the last third of the 20 th century [1,2]. In addition, a large number of studies are devoted to the development of a general model, which presents the compound formation on all surfaces of a vacuum chamber as chemisorption [3][4][5][6]. A nonisothermal physicochemical model describes the process of the cold target reactive sputtering in a more consistent way [7,8].…”