Modelling of the contact processes in a friction pair with selective-transfer

Ilie, Filip

doi:10.1016/j.jmrt.2021.04.048

Cited by 4 publications

(6 citation statements)

References 23 publications

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“…3.2. The potential formation of the Cu-based servovitic films [44,[50][51][52] on polymer and steel surfaces can be also conjectured. However, their formation was not confirmed in our research, therefore their presence on the surfaces of rubbing materials was left as a hypothesis and was not included in the interpretation of potential protective mechanisms (Figure 22).…”

Section: Protective Mechanismsmentioning

confidence: 98%

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Towards the superlubricity of polymer–steel interfaces with ionic liquids and carbon nanotubes

Wojciechowski,

Kubiak,

Boncel

et al. 2024

Tribology International

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Section: Protective Mechanismsmentioning

confidence: 98%

“…After leaving contact, the polymer solidifies, and its surface is enriched with 'trapped' Cu nanoparticles. The presence of Cu on the steel surface is related to the phenomenon of its selective transfer in the presence of a low-density solvent (IL in this case) [44,[50][51][52]]. Under such conditions, i.e.…”

Section: Wear Mechanismsmentioning

confidence: 99%

Towards the superlubricity of polymer–steel interfaces with ionic liquids and carbon nanotubes

Wojciechowski,

Kubiak,

Boncel

et al. 2024

Tribology International

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“…In a friction pair, a selective transfer can certainly be made if, in the contact area, there exists an adequate lubricant (such as glycerin), a copper-based material (in this case, bronze), relative movement, and favorable energy [ 1 ]. By investigating the CMP process of the selective layer, in which copper was the predominant element (≥85%), it was found that under normal conditions, its surface is oxidized.…”

Section: Introductionmentioning

confidence: 99%

“…The rates of oxide removal differ depending on the applied load, the removal depth, and the slurry used. There is extensive research on the CMP process, but for a better understanding of the mechanical and tribochemical phenomena, additional studies are needed that appear at the interface of the pad–wafer (selective layer) in the presence of fluid slurry [ 1 , 2 , 3 , 4 , 5 ]. The studies carried out by Ilie [ 1 ] and Lee et al [ 2 ] showed that the formation of an oxide film on the selective layer surface requires the use of an oxidizer.…”

Section: Introductionmentioning

confidence: 99%

“…There is extensive research on the CMP process, but for a better understanding of the mechanical and tribochemical phenomena, additional studies are needed that appear at the interface of the pad–wafer (selective layer) in the presence of fluid slurry [ 1 , 2 , 3 , 4 , 5 ]. The studies carried out by Ilie [ 1 ] and Lee et al [ 2 ] showed that the formation of an oxide film on the selective layer surface requires the use of an oxidizer. However, due to the volatile copper compounds that are formed only at high temperatures, dry etching on the selective layer surface is not practical [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

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The Effects of Friction and Temperature in the Chemical–Mechanical Planarization Process

et al. 2023

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Chemical–mechanical planarization (CMP) represents the preferred technology in which both chemical and mechanical interactions are combined to achieve global planarization/polishing of wafer surfaces (wafer patterns from metal with a selective layer, in this paper). CMP is a complex process of material removal process by friction, which interferes with numerous mechanical and chemical parameters. Compared with chemical parameters, mechanical parameters have a greater influence on the material removal rate (MRR). The mechanical parameters manifest by friction force (Ff) and heat generated by friction in the CMP process. The Ff can be estimated by its monitoring in the CMP process, and process temperature is obtained with help of an infrared rays (IR) sensor. Both the Ff and the MRR increase by introducing colloidal silica (SiO2) as an abrasive into the selective layer CMP slurry. The calculated wafer non-uniformity (WNU) was correlated with the friction coefficient (COF). The control of Ff and of the slurry stability is important to maintain a good quality of planarization with optimal results, because Ff participates in mechanical abrasion, and large Ff may generate defects on the wafer surface. Additionally, the temperature generated by the Ff increases as the SiO2 concentration increases. The MRR of the selective layer into the CMP slurry showed a non-linear (Prestonian) behavior, useful not only to improve the planarization level but to improve its non-uniformity due to the various pressure distributions. The evaluation of the Ff allowed the calculation of the friction energy (Ef) to highlight the chemical contribution in selective-layer CMP, from which it derived an empirical model for the material removal amount (MRA) and validated by the CMP results. With the addition of abrasive nanoparticles into the CMP slurry, their concentration increased and the MRA of the selective layer improved; Ff and MRR can be increased due to the number of chemisorbed active abrasive nanoparticles by the selective layer. Therefore, a single abrasive was considered to better understand the effect of SiO2 concentration as an abrasive and of the MRR features depending on abrasive nanoparticle concentration. This paper highlights the correlation between friction and temperature of the SiO2 slurry with CMP results, useful to examine the temperature distribution. All the MRRs depending on Ef after planarization with various SiO2 concentrations had a non-linear characteristic. The obtained results can help in developing a CMP process more effectively.

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