Modelling of Through Silicon Via RF performance and impact on signal transmission in 3D integrated circuits

Cadix, L.; Farcy, A.; Bermond, C.; Fuchs, C.; Leduc, P.; Rousseau, M.; Assous, M.; Valentian, Alexandre; Roullard, J.; Eid, E.; Sillon, N.; Flechet, B.; Ancey, P.

doi:10.1109/3dic.2009.5306592

Cited by 34 publications

(6 citation statements)

References 4 publications

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“…Instead, an extensive amount of work has been done to model a single signal-ground pair of TSV analytically. In [7], [9], and [10], a parametric and frequency-dependent equivalent circuit model is developed by employing EM simulations. In [8], an MIS structure signal-ground TSV equivalent circuit model is proposed based on TSV physics and closed-form equations.…”

Section: Preliminary On Tsv Modelingmentioning

confidence: 99%

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Yao

Pan

Achkir

et al. 2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Abstract-Through-silicon-via (TSV) enables vertical connectivity between stacked chips or interposer and is a key technology for 3-D integrated circuits (ICs). While arrays of TSVs are needed in 3-D IC, there only exists a frequency-dependent resistance, inductance, conductance and capacitance circuit model for a pair of TSVs with coupling between them. In this paper, we develop a simple yet accurate circuit model for a multiport TSV network (e.g., coupled TSV array) by decomposing the network into a number of TSV pairs and then applying circuit models for each of them. We call the new model a pair-based model for the multiport TSV network. It is first verified against a commercial electromagnetic solver for up to 20 GHz and subsequently employed for a variety of examples for signal and power integrity analysis.

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Section: Preliminary On Tsv Modelingmentioning

confidence: 99%

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Yao

Pan

Achkir

et al. 2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…Between two adjacent TSVs, coupling capacitance Cc is calculated as 4.0 fF, and mutual inductance Lm as 4.5 pH. Parameters of various TSV structures are listed in Table III. For a frequency range above 1 GHz, signal-ground (S-G) or ground-signal-ground (G-S-G) structures are required [13,14]. A TSV equivalent circuit model is proposed in which the parasitic were extracted by fitting the measurement-based S parameter up to 20 GHz [13,14].…”

Section: B Tsv Modelsmentioning

confidence: 99%

Design and feasibility of multi-Gb/s quasi-serial vertical interconnects based on TSVs for 3D ICs

Sun

Cevrero

Athanasopoulos

et al. 2010

2010 18th IEEE/IFIP International Conference on VLSI and System-on-Chip

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Abstract-This paper proposes a novel technique to exploit the high bandwidth offered by through silicon vias (TSVs). In the proposed approach, synchronous parallel 3D links are replaced by serialized links to save silicon area and increase yield. Detailed analysis conducted in 90 nm CMOS technology shows that the proposed 2-Gb/s/pin quasi-serial link requires approximately five times less area than its parallel bus equivalent at same data rate for a TSV diameter of 20 μm.

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“…The empirical π-type equivalent-circuit model for TSV was investigated in [3]. The model with transmission line-based circuits used curve fitting to achieve optimization.…”

Section: Introductionmentioning

confidence: 99%

Accuracy-improved through-silicon-via model using conformal mapping technique

Cheng

Wang

Chiou

et al. 2011

2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems

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In this paper, the effects of slow wave and dielectric quasi-TEM modes in through-silicon via (TSV) are analyzed by using the currently used TSV model. By the E-field plot, if pitchto-diameter ratio is small in TSV structure, it is found out that some electrical behaviour of the TSVs is not well characterized by conventional model. This paper proposes a general and analytic model for the electrical modeling of through-silicon via (TSV) based on the conformal mapping method to modify the conventional model in admittance (CG) parts. With the improved model, the electrical performance of the modified model agrees very well with full-wave simulation up to 40GHz for small normalized pitch TSV.

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Modelling of Through Silicon Via RF performance and impact on signal transmission in 3D integrated circuits

Cited by 34 publications

References 4 publications

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Design and feasibility of multi-Gb/s quasi-serial vertical interconnects based on TSVs for 3D ICs

Accuracy-improved through-silicon-via model using conformal mapping technique

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